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1.发明申请CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权当前对平面磁阻的正确读取头设计使用当前的约束结构接近空中轴承表面公开(公告)号：US20120075751A1
公开(公告)日：2012-03-29
申请号：US13314449
申请日：2011-12-08
IPC分类号： G11B5/11
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。
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公开(公告)号：US08284525B2
公开(公告)日：2012-10-09
申请号：US13314449
申请日：2011-12-08
IPC分类号： G11B5/31
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
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3.发明授权Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface 有权电流垂直于平面磁阻读头设计，使用靠近空气轴承表面的电流限制结构公开(公告)号：US08098463B2
公开(公告)日：2012-01-17
申请号：US12182701
申请日：2008-07-30
IPC分类号： G11B5/31
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。
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4.发明申请CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权当前对平面磁阻的正确读取头设计使用当前的约束结构接近空中轴承表面公开(公告)号：US20100027167A1
公开(公告)日：2010-02-04
申请号：US12182701
申请日：2008-07-30
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。
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5.发明授权公开(公告)号：US07974047B2
公开(公告)日：2011-07-05
申请号：US12202675
申请日：2008-09-02
IPC分类号： G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。 第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。 第二导电引线与第二MR传感器接触。 注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。
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6.发明申请公开(公告)号：US20100053818A1
公开(公告)日：2010-03-04
申请号：US12202675
申请日：2008-09-02
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。 第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。 第二导电引线与第二MR传感器接触。 注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。
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7.发明授权Read sensors and methods of making same with back-edge milling and refilling 有权读取传感器和使用后边缘铣削和重新填充的方法公开(公告)号：US08136226B2
公开(公告)日：2012-03-20
申请号：US12122417
申请日：2008-05-16
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B5/398 , G11B2005/3996 , Y10T29/49043 , Y10T428/1121
摘要： Methods and apparatus provide a refill configuration adjacent a back-edge that defines a height of a magnetoresistive read sensor. Milling through layers of the sensor forms the back-edge and may be initially conducted at a first angle of incidence greater than a second angle of incidence. In combination, an insulating material and a polish resistant material, such as a non-magnetic metal, disposed on the insulating material fills a void created by the milling. The sensor further includes first and second magnetic shields with the layers of the sensor along with the polish resistant material and insulating material disposed between the first and second magnetic shields.
摘要翻译： 方法和装置提供了邻近限定磁阻读取传感器的高度的后缘的再填充配置。 通过传感器层的铣削形成后边缘并且可以最初以大于第二入射角的第一入射角进行。 结合在一起，设置在绝缘材料上的绝缘材料和耐抛光材料（例如非磁性金属）填充由铣削产生的空隙。 传感器还包括第一和第二磁屏蔽，其中传感器的层与防抛光材料以及设置在第一和第二磁屏蔽之间的绝缘材料一起。
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8.发明申请READ SENSORS AND METHODS OF MAKING SAME WITH BACK-EDGE MILLING AND REFILLING 有权读取传感器和制造相同方法的后边缘铣削和修补公开(公告)号：US20090286106A1
公开(公告)日：2009-11-19
申请号：US12122417
申请日：2008-05-16
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B5/398 , G11B2005/3996 , Y10T29/49043 , Y10T428/1121
摘要： Methods and apparatus provide a refill configuration adjacent a back-edge that defines a height of a magnetoresistive read sensor. Milling through layers of the sensor forms the back-edge and may be initially conducted at a first angle of incidence greater than a second angle of incidence. In combination, an insulating material and a polish resistant material, such as a non-magnetic metal, disposed on the insulating material fills a void created by the milling. The sensor further includes first and second magnetic shields with the layers of the sensor along with the polish resistant material and insulating material disposed between the first and second magnetic shields.
摘要翻译： 方法和装置提供了邻近限定磁阻读取传感器的高度的后缘的再填充配置。 通过传感器层的铣削形成后边缘并且可以最初以大于第二入射角的第一入射角进行。 结合在一起，设置在绝缘材料上的绝缘材料和耐抛光材料（例如非磁性金属）填充由铣削产生的空隙。 传感器还包括第一和第二磁屏蔽，其中传感器的层与防抛光材料以及设置在第一和第二磁屏蔽之间的绝缘材料一起。
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公开(公告)号：US20070297090A1
公开(公告)日：2007-12-27
申请号：US11425665
申请日：2006-06-21
申请人： Hardayal S. Gill
发明人： Hardayal S. Gill
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3906 , Y10T29/49037
摘要： A magnetic read head and a method for manufacturing a magnetic read head are provided. In one embodiment, the method includes providing the magnetic read head comprising a pinning layer disposed over a substrate of the magnetic read head, a pinned layer, a reference layer, a tunneling barrier layer, and a free layer, wherein the free layer is in contact with the tunneling barrier layer. The method further includes milling partially through the free layer from a back surface, thereby creating an exposed face of the free layer which is coplanar with the substrate and oxidizing a portion of the free layer between the exposed face and the tunneling barrier layer. The method further includes milling through the free layer, tunneling barrier layer, reference layer, pinned layer, and pinning layer along lateral sides of the magnetic read head.
摘要翻译： 提供磁读头和制造磁读头的方法。 在一个实施例中，该方法包括提供磁读头，其包括设置在磁读头的衬底上的钉扎层，钉扎层，参考层，隧道势垒层和自由层，其中自由层处于 与隧道势垒层接触。 该方法还包括从后表面部分地穿过自由层，从而产生与衬底共面的自由层的暴露面，并且在暴露面和隧道势垒层之间氧化自由层的一部分。 该方法还包括沿着磁读头的侧面穿过自由层，隧道势垒层，参考层，钉扎层和钉扎层。
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10.发明授权Method of manufacturing an MR read head which eliminates lead-to-shield shorts at the ABS of the MR read head 失效制造MR读取头的方法，其消除MR读取头的ABS处的导线 - 屏蔽短路
公开(公告)号：US5467881A
公开(公告)日：1995-11-21
申请号：US267269
申请日：1994-06-28
申请人： Hardayal S. Gill
发明人： Hardayal S. Gill
CPC分类号： G11B5/3903 , G11B5/3163
摘要： A method is provided for eliminating lead to shield electrical shorts at the ABS of an MR read head. The electrical shorts are eliminated by removing streaks of conductive material which extend between the conductive leads and the conductive shields across first and second insulative gap layers. A photoresist layer is formed over the edge surface of the MR stripe at the ABS along with coextensive widths of edge surfaces of other thin film surfaces at the ABS. The uncovered edge surfaces of the remaining thin film layers at the ABS are then subjected to reactive ion etching to remove about 500.ANG. of the uncovered edge surfaces. With a photoresist layer approximately 10 .mu.m thick, the edge surface of the MR stripe is fully protected during this process. After the etching step, the photoresist layer is removed and the MR read head is free of electrical shorts between the leads and the shields. This method is especially adaptable for batch production of MR read heads where the MR stripes are arranged in rows and columns on a wafer. Strips of photoresist are formed over the columns of MR stripes for their protection while the unwanted streaks of conductive material between the leads and the shields are removed by the aforementioned etching process.
摘要翻译： 提供了一种用于消除在MR读取头的ABS处屏蔽电气短路的引线的方法。 通过去除在导电引线和导电屏蔽之间延伸穿过第一和第二绝缘间隙层的导电材料的条纹来消除电短路。 在ABS处的MR条纹的边缘表面上形成光致抗蚀剂层以及ABS处的其它薄膜表面的边缘表面的共同宽度。 然后将ABS处的剩余薄膜层的未覆盖的边缘表面进行反应离子蚀刻以除去未覆盖的边缘表面的约500。 对于大约10微米厚的光致抗蚀剂层，在该过程中MR条纹的边缘表面被完全保护。 在蚀刻步骤之后，去除光致抗蚀剂层，并且MR读取头在引线和屏蔽之间没有电短路。 该方法特别适用于MR读取头的批量生产，其中MR条以行和列排列在晶片上。 光致抗蚀剂条形成在MR条的列上用于保护，同时通过上述蚀刻工艺除去引线和屏蔽之间的不需要的导电材料条纹。
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