公开(公告)号：US07829397B2

公开(公告)日：2010-11-09

申请号：US12400171

申请日：2009-03-09

Applicant: Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

Inventor： Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/8238

CPC classification number: H01L29/66765 ,  H01L29/04 ,  H01L29/452 ,  H01L29/78678 ,  H01L29/78696

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Abstract translation: 底栅薄膜晶体管包括栅电极，栅极绝缘层和微晶硅层。 栅电极设置在基板上。 栅极绝缘层由氮化硅构成并且设置在栅电极和基板上。 微晶硅层设置在栅极绝缘层上，对应于栅电极，其中栅极绝缘层和微晶硅层之间的接触界面具有多个氧原子，氧原子的浓度范围在1020原子之间 / cm3和1025原子/ cm3。 本文还公开了制造底栅薄膜晶体管的方法。

公开(公告)号：US20110012114A1

公开(公告)日：2011-01-20

申请号：US12893063

申请日：2010-09-29

Applicant: Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

Inventor： Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

IPC: H01L29/786

CPC classification number: H01L29/66765 ,  H01L29/04 ,  H01L29/452 ,  H01L29/78678 ,  H01L29/78696

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Abstract translation: 底栅薄膜晶体管包括栅电极，栅极绝缘层和微晶硅层。 栅电极设置在基板上。 栅极绝缘层由氮化硅构成并且设置在栅电极和基板上。 微晶硅层设置在栅极绝缘层上，对应于栅电极，其中栅极绝缘层和微晶硅层之间的接触界面具有多个氧原子，氧原子的浓度范围在1020原子之间 / cm3和1025原子/ cm3。 本文还公开了制造底栅薄膜晶体管的方法。

公开(公告)号：US08084771B2

公开(公告)日：2011-12-27

申请号：US12893063

申请日：2010-09-29

Applicant: Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

Inventor： Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/01 ,  H01L27/12 ,  H01L31/20

CPC classification number: H01L29/66765 ,  H01L29/04 ,  H01L29/452 ,  H01L29/78678 ,  H01L29/78696

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Abstract translation: 底栅薄膜晶体管包括栅电极，栅极绝缘层和微晶硅层。 栅电极设置在基板上。 栅极绝缘层由氮化硅构成并且设置在栅电极和基板上。 微晶硅层设置在栅极绝缘层上，对应于栅电极，其中栅极绝缘层和微晶硅层之间的接触界面具有多个氧原子，氧原子的浓度范围在1020原子之间 / cm3和1025原子/ cm3。 本文还公开了制造底栅薄膜晶体管的方法。

公开(公告)号：US20100096630A1

公开(公告)日：2010-04-22

申请号：US12400171

申请日：2009-03-09

Applicant: Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

Inventor： Ya-Hui Peng ,  Yi-Ya Tseng ,  Kun-Fu Huang ,  Chih-Hsien Chen ,  Han-Tu Lin

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66765 ,  H01L29/04 ,  H01L29/452 ,  H01L29/78678 ,  H01L29/78696

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Abstract translation: 底栅薄膜晶体管包括栅电极，栅极绝缘层和微晶硅层。 栅电极设置在基板上。 栅极绝缘层由氮化硅构成并且设置在栅电极和基板上。 微晶硅层设置在栅极绝缘层上，对应于栅电极，其中栅极绝缘层和微晶硅层之间的接触界面具有多个氧原子，氧原子的浓度范围在1020原子之间 / cm3和1025原子/ cm3。 本文还公开了制造底栅薄膜晶体管的方法。