摘要:
An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors. At least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film.
摘要:
An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.
摘要:
An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors. At least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film.
摘要:
The invention provides an electro-optical device that can include a pixel electrode, a thin-film transistor (TFT) including a semiconductor layer connected to the pixel electrode, and a data line and scanning line connected to the TFT. The scanning line can include a narrow part as a gate electrode facing a channel region in the semiconductor layer, and a wide part not facing the channel region.Such construction permits the electro-optical device to display high quality images by preventing light from impinging the TFT.
摘要:
An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors that are disposed to correspond to intersections of the data lines and the scanning lines in plan view above the substrate and are disposed below the data lines; storage capacitors that are disposed above the data lines, each of the storage capacitors being formed by stacking a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode in this order from below; pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors; and an interlayer insulating film stacked above the dielectric film. Each of the storage capacitors has a stacked structure in which the fixed-potential-side electrode is stacked on the dielectric film exposed through an opening passing through the interlayer insulating film.
摘要:
An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.
摘要:
An electro-optical device includes, above a substrate: a data line extending in a first direction; a scanning line extending in a second direction and intersecting the data line; pixel electrode and thin film transistor disposed so as to correspond to intersection regions of the data line and the scanning line; a storage capacitor electrically connected to the thin film transistor and the pixel electrode; a shielding layer disposed between the data line and the pixel electrode; an interlayer insulating film disposed as the base of the pixel electrode; and a contact hole formed in the interlayer insulating film, to electrically connect the thin film transistor to the pixel electrode. Further, the entire region inside the contact hole is filled with a filler.
摘要:
Aspects of the invention can provide an electro-optical device having n image signal lines to which n serial to parallel converted image signals are supplied. A driving circuit has a sampling circuit that can include a plurality of thin film transistors. Each of the thin film transistors can have (i) a drain connected to a drain wiring line arranged from a data line in a direction in which the data line extends, (ii) a source connected to a source wiring line arranged from the image signal line in a direction in which the data line extends, and (iii) a gate arranged to be sandwiched between the drain wiring line and the source wiring line in a direction in which the data line extends, and the plurality of thin film transistors can be arranged to correspond to the plurality of data lines. Two adjacent thin film transistors with the boundary between thin film transistor groups interposed therebetween among the plurality of thin film transistors can be arranged such that the arrangements of the source and drain wiring lines with a gate interposed therebetween are opposite to each other. By doing so, it is possible to reduce image faults caused by parasitic capacitance located between the thin film transistors in the sampling circuit.
摘要:
Aspects of the invention provide an electro-optical device that can include data lines that are a built-in light shielding film, scanning lines, TFTs having a semiconductor layer to which scanning signals are supplied by the scanning lines, pixel electrodes to which image signals are supplied by the data lines through the TFTs, storage capacitors arranged below the data lines, and an insulating film covering the storage capacitors. The data lines can be formed to avoid stepped portions on the surface of the insulating film caused by the height of the storage capacitors. Thus, it can be possible to improve the light shielding performance of the thin film transistors with respect to the semiconductor layer, to reduce or prevent the generation of light leakage current, and to display high-quality images without flicker.
摘要:
An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.