公开(公告)号：US20100065810A1

公开(公告)日：2010-03-18

申请号：US12440233

申请日：2007-04-05

申请人： Ulrich Goesele ,  Stephan Senz ,  Volker Schmidt ,  Yewu Wang

发明人： Ulrich Goesele ,  Stephan Senz ,  Volker Schmidt ,  Yewu Wang

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： C30B29/605 ,  C30B23/00 ,  C30B25/00 ,  C30B29/06 ,  C30B29/08

摘要： A method of synthesizing semiconductor nanostructures of at least one semiconductor material (e.g. nanowires, nanorods, nanoribbons, nanodots, quantumdots, etc.) is described which includes the steps of placing a solid catalyst particle on a substrate, placing the combination of the said substrate and the said solid catalyst in a chamber of low oxygen partial pressure, below I×10−2 mbar, adding one or more gaseous reactants comprising at least one of said semiconductor material and a suitable precursor therefor and heating the said combination to a temperature above 200° C. but below the melting point of the solid catalyst particle. Nanostructures made by the method are also claimed.

摘要翻译： 描述了合成至少一种半导体材料（例如纳米线，纳米棒，纳米带，纳米点，量子点等）的半导体纳米结构的方法，其包括以下步骤：将固体催化剂颗粒放置在基底上，将所述基底 和所述固体催化剂在低氧分压低于I×10-2毫巴的室中，加入一种或多种包含至少一种所述半导体材料和其合适的前体的气态反应物，并将所述组合加热至高于 200℃，但低于固体催化剂颗粒的熔点。 通过该方法制造的纳米结构也被要求保护。