公开(公告)号：US20050001018A1

公开(公告)日：2005-01-06

申请号：US10612383

申请日：2003-07-01

申请人： Ka Kwan ,  Guoshen Hu ,  Tingyu He ,  Yie Mi ,  Yam Wong

发明人： Ka Kwan ,  Guoshen Hu ,  Tingyu He ,  Yie Mi ,  Yam Wong

IPC分类号： H01L21/60 ,  H01L21/687 ,  H01L23/485 ,  B23K37/00 ,  B23K31/02 ,  B23K35/24 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/68764 ,  H01L24/10 ,  H01L2924/01078 ,  H01L2924/01079

摘要： The invention provides an apparatus and a method for forming conductive bumps on a plurality of semiconductor devices with an oxidizable material. The apparatus comprises a bump forming device, a chamber system adapted to house the semiconductor devices and a gas supply for supplying an inert gas into the chamber system. A support table is provided for supporting the semiconductor devices during bumping, and the said support table is operative to move the semiconductor devices from a bumping site into the chamber system after bumping.

摘要翻译： 本发明提供了一种在具有可氧化材料的多个半导体器件上形成导电凸块的装置和方法。 该装置包括凸块形成装置，适于容纳半导体装置的室系统和用于将惰性气体供应到室系统中的气体供应装置。 提供了用于在凸起期间支撑半导体器件的支撑台，并且所述支撑台可操作以在撞击之后将半导体器件从凸起部位移动到腔室系统中。

公开(公告)号：US07303109B2

公开(公告)日：2007-12-04

申请号：US10612383

申请日：2003-07-01

申请人： Ka Shing Kwan ,  Guoshen Hu ,  Tingyu He ,  Yie Mi ,  Yam Mo Wong

发明人： Ka Shing Kwan ,  Guoshen Hu ,  Tingyu He ,  Yie Mi ,  Yam Mo Wong

IPC分类号： B23K1/06 ,  B23K37/04

CPC分类号： H01L21/68764 ,  H01L24/10 ,  H01L2924/01078 ,  H01L2924/01079

摘要： The invention provides an apparatus and a method for forming conductive bumps on a plurality of semiconductor devices with an oxidizable material. The apparatus comprises a bump forming device, a chamber system adapted to house the semiconductor devices and a gas supply for supplying an inert gas into the chamber system. A support table is provided for supporting the semiconductor devices during bumping, and the said support table is operative to move the semiconductor devices from a bumping site into the chamber system after bumping.

摘要翻译： 本发明提供了一种在具有可氧化材料的多个半导体器件上形成导电凸块的装置和方法。 该装置包括凸块形成装置，适于容纳半导体装置的室系统和用于将惰性气体供应到室系统中的气体供应装置。 提供了用于在凸起期间支撑半导体器件的支撑台，并且所述支撑台可操作以在撞击之后将半导体器件从凸起部位移动到腔室系统中。