公开(公告)号：US07392760B2

公开(公告)日：2008-07-01

申请号：US10989106

申请日：2004-11-16

Applicant: Yoji Taguchi ,  Maiko Yoshida ,  Kohta Kusaba ,  Kibatsu Shinohara ,  Munekazu Matsuo ,  Kazuhiro Watanabe

Inventor： Yoji Taguchi ,  Maiko Yoshida ,  Kohta Kusaba ,  Kibatsu Shinohara ,  Munekazu Matsuo ,  Kazuhiro Watanabe

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32211 ,  H01J37/32192

Abstract: A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.

Abstract translation: 微波激发等离子体处理装置显示出宽的压力范围和广泛的适用电力范围，作为通过使用通过矩形波导切割的狭缝的结果的普通放电的结果，并且具有允许微波的电场和微波的轮廓 在微波天线下面的微波引入窗口的下方均匀地形成。 微波激发等离子体处理装置的特征在于具有四个椭圆形狭缝，该椭圆形切口穿过矩形波导的壁，该矩形波导的壁与真空室的顶壁的微波引入窗口保持接触，四个椭圆形狭缝分别沿着 四面大面积的广场。

公开(公告)号：US06451682B1

公开(公告)日：2002-09-17

申请号：US09429109

申请日：1999-10-28

Applicant: Takao Fujikawa ,  Makoto Kadoguchi ,  Kohei Suzuki ,  Yasushi Mizusawa ,  Tomoyasu Kondou ,  Yoji Taguchi

Inventor： Takao Fujikawa ,  Makoto Kadoguchi ,  Kohei Suzuki ,  Yasushi Mizusawa ,  Tomoyasu Kondou ,  Yoji Taguchi

IPC: H01L214763

CPC classification number: H01L21/76864 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76882

Abstract: This invention provides a filming method for covering the surface of the insulating film of a semiconductor substrate with a copper interconnect film free from pores. The surface of the insulating film 2 of a semiconductor substrate 1 is filmed with a copper or copper alloy 3 by any one of plating, CVD and PVD, and the whole body is then heated under a high-pressure gas atmosphere to cover the surface with an interconnect film 4 free from pores.

Abstract translation: 本发明提供了一种用不含孔的铜互连膜覆盖半导体衬底的绝缘膜的表面的成膜方法。半导体衬底1的绝缘膜2的表面用铜或铜合金3通过任何 电镀，CVD和PVD之一，然后在高压气体气氛下加热全体，以便用不含孔的互连膜4覆盖表面。

公开(公告)号：US20050145178A1

公开(公告)日：2005-07-07

申请号：US10989106

申请日：2004-11-16

Applicant: Yoji Taguchi ,  Maiko Yoshida ,  Kohta Kusaba ,  Kibatsu SHinohara ,  Munekazu Matsuo ,  Kazuhiro Watanabe

Inventor： Yoji Taguchi ,  Maiko Yoshida ,  Kohta Kusaba ,  Kibatsu SHinohara ,  Munekazu Matsuo ,  Kazuhiro Watanabe

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/00

CPC classification number: H01J37/32211 ,  H01J37/32192

Abstract: A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.

Abstract translation: 微波激发等离子体处理装置显示出宽的压力范围和广泛的适用电力范围，作为通过使用通过矩形波导切割的狭缝的结果的普通放电的结果，并且具有允许微波的电场和微波的轮廓 在微波天线下面的微波引入窗口的下方均匀地形成。 微波激发等离子体处理装置的特征在于具有四个椭圆形狭缝，该椭圆形切口穿过矩形波导的壁，该矩形波导的壁与真空室的顶壁的微波引入窗口保持接触，四个椭圆形狭缝分别沿着 四面大面积的广场。