公开(公告)号：US08575750B1

公开(公告)日：2013-11-05

申请号：US13136374

申请日：2011-07-29

申请人： Yongdong Zhou ,  Xiao Zhou

发明人： Yongdong Zhou ,  Xiao Zhou

IPC分类号： G01T1/166 ,  G01T1/164

CPC分类号： G01T1/24

摘要： A radiation detector made of High Purity Germanium (HPGe) has been specially machined to be this invented multilayer Inter-Coaxial configuration. With this special configuration, extra large volume HPGe detectors of diameters to be 6 inches, 9 inches, and even 12 inches, can be produced with current achievable HPGe crystal purity and quality, in which the entire detector crystal will be depleted and properly over biased for effective photo-induced signal collection with just less than 5000V bias applied. This invention makes extra large efficiency of 200%, 300%, and maybe even higher than 500% possible with HPGe gamma ray detectors with reasonable great resolution performances procurable based on current HPGe crystal supply capability. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in the future.

摘要翻译： 由高纯锗（HPGe）制成的辐射探测器已被特别加工成为本发明的多层同轴结构。 通过这种特殊配置，可以生产直径为6英寸，9英寸甚至12英寸的超大体积HPGe探测器，其具有目前可实现的HPGe晶体纯度和质量，其中整个检测器晶体将被耗尽并且适当地过度偏置 用于仅施加小于5000V偏压的有效光诱导信号采集。 基于目前的HPGe晶体供应能力，HPGe伽马射线检测器具有合理的高分辨率性能，可实现200％，300％甚至更高的500％的超大效率。 本发明也可以应用于任何其他类型的半导体材料，如果它们中的任何一种可以在将来对该应用进行足够的净化。

公开(公告)号：US20170274826A1

公开(公告)日：2017-09-28

申请号：US14999072

申请日：2016-03-28

申请人： Yongdong Zhou ,  Xiao Zhou ,  Jianhua Wan

发明人： Yongdong Zhou ,  Xiao Zhou ,  Jianhua Wan

IPC分类号： B60R1/08 ,  B60R1/04

CPC分类号： B60R1/082 ,  B60R1/04

摘要： This invention of special rear view mirror structures gives a complete unabridged wide rear view field of both untwisted and twisted image zones that better helps the drivers safely operating their cars and trucks in all kinds of situations.

公开(公告)号：US09105777B1

公开(公告)日：2015-08-11

申请号：US13999310

申请日：2014-02-10

申请人： Yongdong Zhou ,  Xiao Zhou ,  Jianhua Wan

发明人： Yongdong Zhou ,  Xiao Zhou ,  Jianhua Wan

IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/117 ,  H01L31/118

CPC分类号： H01L31/035281 ,  G01T1/24 ,  H01L31/022408 ,  H01L31/117 ,  Y02E10/50

摘要： A High Purity Germanium (HPGe) radiation detector has been specially machined to be this invented series multi-chamber coaxial configuration. So extra-large volume HPGe detectors can be easily produced with current available HPGe crystal, and the entire detector body structure can be uniquely optimized in accordance with the exact semiconductor crystal ingot situation so the overall detector can be easier depleted and the photo-induced carriers can be better collected as the signal output. This invention makes extra-large efficiency HPGe gamma ray detectors of 100% to 200%, and maybe even higher efficiency, possible and easier to be produced based on current HPGe crystal supply capability. The invention improves the detector performance for very high energy gamma ray detection especially. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in future.

摘要翻译： 高纯锗（HPGe）辐射探测器已被特别加工成为本发明的多室同轴配置。 因此，可以使用当前可用的HPGe晶体轻松生产超大体积的HPGe检测器，并且可以根据半导体晶体晶锭情况进行独特优化，从而整个检测器体结构可以更容易地耗尽，并且光致载流子 可以更好地收集作为信号输出。 本发明基于目前的HPGe晶体供应能力，使超高效HPGeγ射线检测器达到100％至200％，甚至可能更高的效率，更可能和更容易生产。 本发明特别提高了用于极高能量γ射线检测的检测器性能。 本发明也可以应用于任何其他类型的半导体材料，如果它们中的任何一种可以在将来对该应用进行足够的净化。

公开(公告)号：US20150228826A1

公开(公告)日：2015-08-13

申请号：US13999310

申请日：2014-02-10

申请人： Yongdong Zhou ,  Xiao Zhou ,  Jianhua Wan

发明人： Yongdong Zhou ,  Xiao Zhou ,  Jianhua Wan

IPC分类号： H01L31/0352 ,  H01L31/118 ,  H01L31/117 ,  H01L31/028 ,  H01L31/0224

CPC分类号： H01L31/035281 ,  G01T1/24 ,  H01L31/022408 ,  H01L31/117 ,  Y02E10/50

摘要： A High Purity Germanium (HPGe) radiation detector has been specially machined to be this invented series multi-chamber coaxial configuration. So extra-large volume HPGe detectors can be easily produced with current available HPGe crystal, and the entire detector body structure can be uniquely optimized in accordance with the exact semiconductor crystal ingot situation so the overall detector can be easier depleted and the photo-induced carriers can be better collected as the signal output. This invention makes extra-large efficiency HPGe gamma ray detectors of 100% to 200%, and maybe even higher efficiency, possible and easier to be produced based on current HPGe crystal supply capability. The invention improves the detector performance for very high energy gamma ray detection especially. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in future.

摘要翻译： 高纯锗（HPGe）辐射探测器已被特别加工成为本发明的多室同轴配置。 因此，可以使用当前可用的HPGe晶体轻松生产超大体积的HPGe检测器，并且可以根据半导体晶体晶锭情况独特优化整个检测器体结构，从而整体检测器可以更容易地耗尽，并且光致载体 可以更好地收集作为信号输出。 本发明基于目前的HPGe晶体供应能力，使超高效HPGeγ射线检测器达到100％至200％，甚至可能更高的效率，更可能和更容易生产。 本发明特别提高了用于极高能量γ射线检测的检测器性能。 本发明也可以应用于任何其他类型的半导体材料，如果它们中的任何一种可以在将来对该应用进行足够的净化。