公开(公告)号：US09041032B2

公开(公告)日：2015-05-26

申请号：US13484120

申请日：2012-05-30

申请人： Joo Won Choi ,  Yoo Dae Han ,  Jeong Hun Heo

发明人： Joo Won Choi ,  Yoo Dae Han ,  Jeong Hun Heo

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  B82Y20/00 ,  B82Y99/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/06 ,  Y10S977/773

摘要： An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.

摘要翻译： 本发明的示例性实施例包括包括应变增强阱层的发光二极管。 发光二极管包括n接触层，具有阻挡层和阱层的有源层，p接触层和构造为增强施加到阱层的应变的应变增强层。

公开(公告)号：US20130134386A1

公开(公告)日：2013-05-30

申请号：US13484120

申请日：2012-05-30

申请人： Joo Won CHOI ,  Yoo Dae HAN ,  Jeong Hun HEO

发明人： Joo Won CHOI ,  Yoo Dae HAN ,  Jeong Hun HEO

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/06 ,  Y10S977/773

摘要： An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.

摘要翻译： 本发明的示例性实施例包括包括应变增强阱层的发光二极管。 发光二极管包括n接触层，具有阻挡层和阱层的有源层，p接触层和构造为增强施加到阱层的应变的应变增强层。