公开(公告)号：US07638414B2

公开(公告)日：2009-12-29

申请号：US12040439

申请日：2008-02-29

申请人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

发明人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/20

CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/22

摘要： A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.

摘要翻译： 公开了在图案化基板上形成高质量氮化物半导体层的方法和具有该氮化物半导体层的发光二极管。 在图案化的衬底上形成成核层之后，通过在3D和2D生长条件下生长氮化物半导体层，依次形成第一3D和2D生长层。 然后，通过在另一3D生长条件下生长氮化物半导体层，在第一2D生长层上形成第二3D生长层，并且通过在另一2D中生长氮化物半导体层，在第二3D生长层上形成第二2D生长层 生长条件。 因此，可以通过交替地形成3D和2D生长层来减少3D生长层的厚度，从而防止3D生长层具有粗糙表面并提高最终2D生长层的晶体质量。

公开(公告)号：US20080217647A1

公开(公告)日：2008-09-11

申请号：US12040439

申请日：2008-02-29

申请人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

发明人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

IPC分类号： H01L21/20

CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/22

摘要： A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.

摘要翻译： 公开了在图案化基板上形成高质量氮化物半导体层的方法和具有该氮化物半导体层的发光二极管。 在图案化的衬底上形成成核层之后，通过在3D和2D生长条件下生长氮化物半导体层，依次形成第一3D和2D生长层。 然后，通过在另一3D生长条件下生长氮化物半导体层，在第一2D生长层上形成第二3D生长层，并且通过在另一2D中生长氮化物半导体层，在第二3D生长层上形成第二2D生长层 生长条件。 因此，可以通过交替地形成3D和2D生长层来减少3D生长层的厚度，从而防止3D生长层具有粗糙表面并提高最终2D生长层的晶体质量。

公开(公告)号：US09224917B2

公开(公告)日：2015-12-29

申请号：US13984147

申请日：2012-01-17

申请人： Won Cheol Seo ,  Joo Won Choi

发明人： Won Cheol Seo ,  Joo Won Choi

IPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L2933/0083

摘要： Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.

摘要翻译： 公开了具有光子晶体结构的发光二极管（LED）及其制造方法。 LED包括支撑衬底，位于支撑衬底上的下半导体层，位于下半导体层之上的上半导体层，位于下半导体层和上半导体层之间的有源区，以及嵌入在下半导体中的光子晶体结构 层。 光子晶体结构可以防止光朝着支撑基板前进的损失，并提高光提取效率。

公开(公告)号：US09041032B2

公开(公告)日：2015-05-26

申请号：US13484120

申请日：2012-05-30

申请人： Joo Won Choi ,  Yoo Dae Han ,  Jeong Hun Heo

发明人： Joo Won Choi ,  Yoo Dae Han ,  Jeong Hun Heo

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  B82Y20/00 ,  B82Y99/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/06 ,  Y10S977/773

摘要： An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.

摘要翻译： 本发明的示例性实施例包括包括应变增强阱层的发光二极管。 发光二极管包括n接触层，具有阻挡层和阱层的有源层，p接触层和构造为增强施加到阱层的应变的应变增强层。

公开(公告)号：US20130320301A1

公开(公告)日：2013-12-05

申请号：US13984147

申请日：2012-01-17

申请人： Won Cheol Seo ,  Joo Won Choi

发明人： Won Cheol Seo ,  Joo Won Choi

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L2933/0083

摘要： Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.

摘要翻译： 公开了具有光子晶体结构的发光二极管（LED）及其制造方法。 LED包括支撑衬底，位于支撑衬底上的下半导体层，位于下半导体层之上的上半导体层，位于下半导体层和上半导体层之间的有源区，以及嵌入在下半导体中的光子晶体结构 层。 光子晶体结构可以防止光朝着支撑基板前进的损失，并提高光提取效率。

公开(公告)号：US20130134386A1

公开(公告)日：2013-05-30

申请号：US13484120

申请日：2012-05-30

申请人： Joo Won CHOI ,  Yoo Dae HAN ,  Jeong Hun HEO

发明人： Joo Won CHOI ,  Yoo Dae HAN ,  Jeong Hun HEO

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  B82Y20/00 ,  B82Y99/00 ,  H01L33/06 ,  Y10S977/773

摘要： An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.

摘要翻译： 本发明的示例性实施例包括包括应变增强阱层的发光二极管。 发光二极管包括n接触层，具有阻挡层和阱层的有源层，p接触层和构造为增强施加到阱层的应变的应变增强层。

公开(公告)号：US20130026531A1

公开(公告)日：2013-01-31

申请号：US13360471

申请日：2012-01-27

申请人： Won Cheol Seo ,  Joo Won Choi

发明人： Won Cheol Seo ,  Joo Won Choi

IPC分类号： H01L33/62

CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L2933/0083

摘要： A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED.

摘要翻译： 具有光子晶体结构的非极性发光二极管（LED）及其制造方法。 非极性LED包括支撑衬底，位于支撑衬底上的下半导体层，位于下半导体层上的上半导体层，位于下半导体层和上半导体层之间的非极性有源区，以及光子晶体 结构嵌入下半导体层。 嵌入在下半导体层中的光子晶体结构可以通过防止半导体层中的光的损失来提高发光效率，并且使用光子晶体结构来提高非极性LED的偏振比。

公开(公告)号：US20080237570A1

公开(公告)日：2008-10-02

申请号：US12057842

申请日：2008-03-28

申请人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

发明人： Joo Won CHOI ,  Dong Seon LEE ,  Gyu Beom KIM ,  Sang Joon LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

摘要： A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了具有超晶格结构的阱和/或势垒层的发光二极管（LED）。 LED在N型GaN基半导体化合物层和P型GaN基半导体化合物层之间具有有源区，其中有源区包括具有超晶格结构的阱和/或势垒层。 由于采用具有超晶格结构的阱和/或势垒层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

公开(公告)号：US09466761B2

公开(公告)日：2016-10-11

申请号：US12057842

申请日：2008-03-28

申请人： Joo Won Choi ,  Dong Seon Lee ,  Gyu Beom Kim ,  Sang Joon Lee

发明人： Joo Won Choi ,  Dong Seon Lee ,  Gyu Beom Kim ,  Sang Joon Lee

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  B82Y20/00 ,  H01S5/343 ,  H01L33/12 ,  H01L33/32

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

摘要： A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了具有超晶格结构的阱和/或势垒层的发光二极管（LED）。 LED在N型GaN基半导体化合物层和P型GaN基半导体化合物层之间具有有源区，其中有源区包括具有超晶格结构的阱和/或势垒层。 由于采用具有超晶格结构的阱和/或势垒层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。