Semiconductor integrated circuit device and method for controlling power supply voltage
    1.
    发明申请
    Semiconductor integrated circuit device and method for controlling power supply voltage 失效
    半导体集成电路装置及控制电源电压的方法

    公开(公告)号:US20110068855A1

    公开(公告)日:2011-03-24

    申请号:US12923342

    申请日:2010-09-15

    申请人: Yoshifumi Ikenaga

    发明人: Yoshifumi Ikenaga

    IPC分类号: G05F3/02

    摘要: The present invention is a semiconductor integrated circuit device including a target circuit, a voltage supply circuit that supplies the power supply voltage to the target circuit, a control circuit that controls an output voltage of the voltage supply circuit, and a target voltage prediction circuit that predicts a voltage value of the power supply voltage. The control circuit changes the output voltage of the voltage supply circuit by a predetermined voltage value. The target voltage prediction circuit detects a change amount of an operating frequency of the target circuit along with the change of the predetermined voltage value, and calculates a target voltage value based on a relation between the change amount of the operating frequency and the predetermined voltage value. The voltage supply circuit supplies a power supply voltage corresponding to the target voltage value to the target circuit.

    摘要翻译: 本发明是一种半导体集成电路装置,包括:目标电路,向目标电路供给电源电压的电压供给电路;控制电压供给电路的输出电压的控制电路;以及目标电压预测电路, 预测电源电压的电压值。 控制电路将电压供给电路的输出电压改变预定的电压值。 目标电压预测电路随着预定电压值的变化来检测目标电路的工作频率的变化量,并且基于工作频率的变化量与预定电压值之间的关系来计算目标电压值 。 电压供给电路将与目标电压值对应的电源电压供给到目标电路。

    SEMICONDUCTOR INTEGRATED CIRCUIT AND VOLTAGE CONTROLLER THEREWITH
    2.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT AND VOLTAGE CONTROLLER THEREWITH 审中-公开
    半导体集成电路和电压控制器

    公开(公告)号:US20110187419A1

    公开(公告)日:2011-08-04

    申请号:US13017268

    申请日:2011-01-31

    IPC分类号: H03B19/00 G05F1/10

    CPC分类号: G05F1/10 H03B19/00

    摘要: A semiconductor integrated circuit is capable of accurately detecting the characteristics of a chip. The semiconductor integrated circuit includes a monitor circuit and a control circuit. The control circuit generates a clock pulse signal having M successive pulses (M is 2 or a greater integer), and outputs the clock pulse signal to the monitor circuit. The monitor circuit includes a frequency divider and a ring oscillator. The frequency divider frequency divides the clock pulse signal by M and generates the resulting signal as an enable signal. The ring oscillator generates an oscillation signal as a monitor output value during a period defined in accordance with the enable signal.

    摘要翻译: 半导体集成电路能够准确地检测芯片的特性。 半导体集成电路包括监视电路和控制电路。 控制电路产生具有M个连续脉冲(M为2或更大整数)的时钟脉冲信号,并将该时钟脉冲信号输出到监视电路。 监视电路包括分频器和环形振荡器。 分频器频率将时钟脉冲信号除以M,并产生结果信号作为使能信号。 环形振荡器在根据使能信号定义的周期期间产生作为监视器输出值的振荡信号。

    Semiconductor integrated circuit device
    3.
    发明申请
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US20060091936A1

    公开(公告)日:2006-05-04

    申请号:US11261753

    申请日:2005-10-31

    IPC分类号: H03K3/01

    摘要: A substrate bias is controlled such that a leakage current is minimum. A semiconductor integrated circuit device comprises a leakage detecting circuit which detects a leakage current by using leakage detecting MOSFETs, a control circuit which generates a control signal depending on an output from the leakage detecting circuit, a substrate bias generating circuit which changes a substrate bias depending on the control signal, and a controlled circuit including a MOSFET having the same characteristics as that of each of the leakage detecting MOSFETs. The leakage detecting circuit detects a substrate leakage current which includes as the substrate bias becomes deep and a subthreshold leakage current which decreases as the substrate bias becomes deep. A control signal is transmitted to the substrate bias generating circuit such that the substrate bias is made deep when the substrate leakage current is smaller than the subthreshold leakage current and such that the substrate bias is made shallow when the substrate leakage current is larger than the subthreshold leakage current.

    摘要翻译: 控制衬底偏置使得漏电流最小。 一种半导体集成电路装置,包括利用泄漏检测用MOSFET检测泄漏电流的漏电检测电路,根据来自漏电检测电路的输出产生控制信号的控制电路,将衬底偏置变化的衬底偏置产生电路 控制信号的控制电路以及具有与各漏电检测用MOSFET相同特性的MOSFET的受控电路。 泄漏检测电路检测衬底偏置变深时包括的衬底漏电流,以及随着衬底偏压变深而减小的亚阈值漏电流。 控制信号被传送到衬底偏置产生电路,使得当衬底漏电流小于亚阈值漏电流时衬底偏压变深,并且当衬底泄漏电流大于次阈值时衬底偏置变浅 漏电流。

    Semiconductor integrated circuit device and method for controlling power supply voltage
    4.
    发明授权
    Semiconductor integrated circuit device and method for controlling power supply voltage 失效
    半导体集成电路装置及控制电源电压的方法

    公开(公告)号:US08368457B2

    公开(公告)日:2013-02-05

    申请号:US12923342

    申请日:2010-09-15

    申请人: Yoshifumi Ikenaga

    发明人: Yoshifumi Ikenaga

    IPC分类号: G11C5/14

    摘要: The present invention is a semiconductor integrated circuit device including a target circuit, a voltage supply circuit that supplies the power supply voltage to the target circuit, a control circuit that controls an output voltage of the voltage supply circuit, and a target voltage prediction circuit that predicts a voltage value of the power supply voltage. The control circuit changes the output voltage of the voltage supply circuit by a predetermined voltage value. The target voltage prediction circuit detects a change amount of an operating frequency of the target circuit along with the change of the predetermined voltage value, and calculates a target voltage value based on a relation between the change amount of the operating frequency and the predetermined voltage value. The voltage supply circuit supplies a power supply voltage corresponding to the target voltage value to the target circuit.

    摘要翻译: 本发明是一种半导体集成电路装置,包括:目标电路,向目标电路供给电源电压的电压供给电路;控制电压供给电路的输出电压的控制电路;以及目标电压预测电路, 预测电源电压的电压值。 控制电路将电压供给电路的输出电压改变预定的电压值。 目标电压预测电路随着预定电压值的变化来检测目标电路的工作频率的变化量,并且基于工作频率的变化量与预定电压值之间的关系来计算目标电压值 。 电压供给电路将与目标电压值对应的电源电压供给到目标电路。

    Semiconductor integrated circuit device and power supply voltage control system
    5.
    发明授权
    Semiconductor integrated circuit device and power supply voltage control system 失效
    半导体集成电路器件和电源电压控制系统

    公开(公告)号:US08004351B2

    公开(公告)日:2011-08-23

    申请号:US12521605

    申请日:2007-12-28

    IPC分类号: G05F1/10

    CPC分类号: H03K19/0016

    摘要: A semiconductor integrated circuit device includes: a target circuit whose at least power supply voltage is variable; a power supply voltage providing circuit feeding the target circuit with a power supply voltage; and a minimum energy point monitor circuit detecting an energy-minimizing power supply voltage which minimizes a change in the energy consumed by the target circuit upon a change in the power supply voltage. The power supply voltage delivered by the power supply voltage providing circuit is controlled so as to be equal to the energy-minimizing power supply voltage detected by the minimum energy point monitor circuit.

    摘要翻译: 一种半导体集成电路器件,包括:目标电路,其至少电源电压是可变的; 电源电压提供电路,向目标电路馈送电源电压; 以及最小能量点监视电路,其检测能量最小化电源电压,其使得在电源电压变化时使目标电路消耗的能量的变化最小化。 由电源电压提供电路输送的电源电压被控制为等于由最小能量点监控电路检测到的能量最小化电源电压。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY VOLTAGE CONTROL SYSTEM
    6.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY VOLTAGE CONTROL SYSTEM 失效
    半导体集成电路设备和电源电压控制系统

    公开(公告)号:US20100327961A1

    公开(公告)日:2010-12-30

    申请号:US12521605

    申请日:2007-12-28

    IPC分类号: G05F1/10

    CPC分类号: H03K19/0016

    摘要: A semiconductor integrated circuit device includes: a target circuit whose at least power supply voltage is variable; a power supply voltage providing circuit feeding the target circuit with a power supply voltage; and a minimum energy point monitor circuit detecting an energy-minimizing power supply voltage which minimizes a change in the energy consumed by the target circuit upon a change in the power supply voltage. The power supply voltage delivered by the power supply voltage providing circuit is controlled so as to be equal to the energy-minimizing power supply voltage detected by the minimum energy point monitor circuit.

    摘要翻译: 一种半导体集成电路器件,包括:目标电路,其至少电源电压是可变的; 电源电压提供电路,向目标电路馈送电源电压; 以及最小能量点监视电路,其检测能量最小化电源电压,其使得在电源电压变化时使目标电路消耗的能量的变化最小化。 由电源电压提供电路输送的电源电压被控制为等于由最小能量点监控电路检测到的能量最小化电源电压。

    Semiconductor integrated circuit device
    7.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US08008659B2

    公开(公告)日:2011-08-30

    申请号:US11261753

    申请日:2005-10-31

    IPC分类号: H01L23/58 H01L29/10 H03K3/01

    摘要: A substrate bias is controlled such that a leakage current is minimum. A semiconductor integrated circuit device comprises a leakage detecting circuit which detects a leakage current by using leakage detecting MOSFETs, a control circuit which generates a control signal depending on an output from the leakage detecting circuit, a substrate bias generating circuit which changes a substrate bias depending on the control signal, and a controlled circuit including a MOSFET having the same characteristics as that of each of the leakage detecting MOSFETs. The leakage detecting circuit detects a substrate leakage current which includes as the substrate bias becomes deep and a subthreshold leakage current which decreases as the substrate bias becomes deep. A control signal is transmitted to the substrate bias generating circuit such that the substrate bias is made deep when the substrate leakage current is smaller than the subthreshold leakage current and such that the substrate bias is made shallow when the substrate leakage current is larger than the subthreshold leakage current.

    摘要翻译: 控制衬底偏置使得漏电流最小。 一种半导体集成电路装置,包括利用泄漏检测用MOSFET检测泄漏电流的漏电检测电路,根据来自漏电检测电路的输出产生控制信号的控制电路,将衬底偏置变化的衬底偏置产生电路 控制信号的控制电路以及具有与各漏电检测用MOSFET相同特性的MOSFET的受控电路。 泄漏检测电路检测衬底偏置变深时包括的衬底漏电流,以及随着衬底偏压变深而减小的亚阈值漏电流。 控制信号被传送到衬底偏置产生电路,使得当衬底漏电流小于亚阈值漏电流时衬底偏压变深,并且当衬底泄漏电流大于次阈值时衬底偏置变浅 漏电流。

    Power supply voltage control circuit
    8.
    发明申请
    Power supply voltage control circuit 审中-公开
    电源电压控制电路

    公开(公告)号:US20100295530A1

    公开(公告)日:2010-11-25

    申请号:US12662710

    申请日:2010-04-29

    IPC分类号: H02J4/00

    CPC分类号: H02M3/157

    摘要: A power supply voltage control circuit controls power supply voltage supplied to a target circuit that performs certain signal processing. The power supply voltage control circuit includes a control signal generation circuit that selectively generates first and second control signals when the power supply voltage supplied to the target circuit is increased from a first power supply voltage to a second power supply voltage, the second power supply voltage being higher than the first power supply voltage, and a power supply circuit that increases the power supply voltage toward a voltage level of the second power supply voltage based on the first control signal, or increases the power supply voltage to a voltage level higher than the second power supply voltage first and subsequently decreases the power supply voltage to the second power supply voltage based on the second control signal.

    摘要翻译: 电源电压控制电路控制提供给执行特定信号处理的目标电路的电源电压。 电源电压控制电路包括控制信号产生电路,当提供给目标电路的电源电压从第一电源电压增加到第二电源电压时,选择性地产生第一和第二控制信号,第二电源电压 高于第一电源电压的电源电压,以及基于第一控制信号将电源电压提高到第二电源电压的电压电平的电源电路,或者将电源电压提高到高于 并且随后基于第二控制信号将电源电压降低到第二电源电压。

    Semiconductor integrated circuit device
    9.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US08390313B2

    公开(公告)日:2013-03-05

    申请号:US13052400

    申请日:2011-03-21

    IPC分类号: H03K19/00 G01R25/00

    CPC分类号: H03K19/00392

    摘要: When an operation of a specified one of monitor circuits is defective or any of elements forming a ring oscillator in each of the monitor circuits has characteristic abnormality, if voltage control is performed based on a result from the monitor operating at a lowest speed, a required voltage may be overestimated. This results in an increase in power consumption, and also causes an accuracy reduction when the average value of detection results from the multiple monitors is calculated. The multiple monitor circuits are provided. Of the detection results therefrom, any detection result falling outside a predetermined range is ignored, and the average value of the remaining monitor results is used as a final monitor detection value.

    摘要翻译: 当监视电路中指定的一个监视器电路的操作有故障或每个监视器电路中形成环形振荡器的元件中的任何元件具有特征异常时,如果基于监视器以最低速度操作的结果进行电压控制, 电压可能被高估了。 这导致功耗的增加,并且当计算来自多个监视器的检测结果的平均值时,也导致精度降低。 提供多个监视器电路。 在其检测结果中,忽略超出预定范围的任何检测结果,并且将剩余监视结果的平均值用作最终监视检测值。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    10.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
    半导体集成电路设备

    公开(公告)号:US20110241725A1

    公开(公告)日:2011-10-06

    申请号:US13052400

    申请日:2011-03-21

    IPC分类号: H03K19/00 G01R25/00

    CPC分类号: H03K19/00392

    摘要: When an operation of a specified one of monitor circuits is defective or any of elements forming a ring oscillator in each of the monitor circuits has characteristic abnormality, if voltage control is performed based on a result from the monitor operating at a lowest speed, a required voltage may be overestimated. This results in an increase in power consumption, and also causes an accuracy reduction when the average value of detection results from the multiple monitors is calculated. The multiple monitor circuits are provided. Of the detection results therefrom, any detection result falling outside a predetermined range is ignored, and the average value of the remaining monitor results is used as a final monitor detection value.

    摘要翻译: 当监视电路中指定的一个监视器电路的操作有故障或每个监视器电路中形成环形振荡器的元件中的任何元件具有特征异常时,如果基于监视器以最低速度操作的结果执行电压控制,则所需的 电压可能被高估了。 这导致功耗的增加,并且当计算来自多个监视器的检测结果的平均值时,也导致精度降低。 提供多个监视器电路。 在其检测结果中,忽略超出预定范围的任何检测结果,并且将剩余监视结果的平均值用作最终监视检测值。