公开(公告)号：US5866463A

公开(公告)日：1999-02-02

申请号：US861052

申请日：1997-05-21

申请人： Takehiro Hirai ,  Mitsuo Tanaka ,  Atsushi Hori ,  Hiroshi Shimomura ,  Yoshihiko Horikawa

发明人： Takehiro Hirai ,  Mitsuo Tanaka ,  Atsushi Hori ,  Hiroshi Shimomura ,  Yoshihiko Horikawa

IPC分类号： H01L21/331 ,  H01L21/70 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L21/20

CPC分类号： H01L21/8249 ,  Y10S148/01 ,  Y10S148/011

摘要： In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.

摘要翻译： 在具有PNP双极晶体管和高电压电阻的半导体装置中，在P型半导体衬底的表面区域中形成氧化物绝缘层。 在上述半导体衬底中形成P型集电极层，使得至少一部分P型集电极层与所述氧化物绝缘层接触。 在所述P型集电极层的表面区域形成P型集电极接触层。 在不存在所述P型集电极接触层的所述P型集电体层的表面侧的该区域中形成N型基极层。 在所述N型基底层的表面侧形成P型发射极层。 至少在与所述P型集电体层接触的所述P型集电极层的区域中形成有比所述P型集电体层高的杂质浓度的P型集电极 - 接触/碱泄漏层 以防止在所述P型集电极接触层和所述N型基极层之间产生漏电流。

公开(公告)号：US5712174A

公开(公告)日：1998-01-27

申请号：US618115

申请日：1996-03-19

申请人： Takehiro Hirai ,  Mitsuo Tanaka ,  Atsushi Hori ,  Hiroshi Shimomura ,  Yoshihiko Horikawa

发明人： Takehiro Hirai ,  Mitsuo Tanaka ,  Atsushi Hori ,  Hiroshi Shimomura ,  Yoshihiko Horikawa

IPC分类号： H01L21/331 ,  H01L21/70 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L21/265

CPC分类号： H01L21/8249 ,  Y10S148/01 ,  Y10S148/011

摘要： In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.

摘要翻译： 在具有PNP双极晶体管和高电压电阻的半导体装置中，在P型半导体衬底的表面区域中形成氧化物绝缘层。 在上述半导体衬底中形成P型集电极层，使得至少一部分P型集电极层与所述氧化物绝缘层接触。 在所述P型集电极层的表面区域形成P型集电极接触层。 在不存在所述P型集电极接触层的所述P型集电体层的表面侧的该区域中形成N型基极层。 在所述N型基底层的表面侧形成P型发射极层。 至少在与所述P型集电体层接触的所述P型集电极层的区域中形成有比所述P型集电体层高的杂质浓度的P型集电极 - 接触/碱泄漏层 以防止在所述P型集电极接触层和所述N型基极层之间产生漏电流。