公开(公告)号：US06316339B1

公开(公告)日：2001-11-13

申请号：US09513343

申请日：2000-02-25

Applicant: Yoshihiro Okusa ,  Tatsuya Yamauchi

Inventor： Yoshihiro Okusa ,  Tatsuya Yamauchi

IPC: H01L2120

CPC classification number: H01L28/40 ,  H01L21/28158 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/78675

Abstract: On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600° C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1×1020 atoms/cm3 to 1×1021 atoms/cm3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor. Further, a thin film transistor of a high dielectric strength can be produced in a short time on the polycrystalline silicon which is oriented in a short time.

Abstract translation: 在硅基板1上设置氧化硅膜2，通过低压CVD法在不超过10Pa的单硅烷分压和不低于600°的成膜温度下形成多晶硅膜3 C.多晶硅膜掺杂浓度为1×10 20原子/ cm 3至1×10 21原子/ cm 3的磷等杂质，形成磷硅玻璃膜6，去除后，多晶硅膜氧化成氧化 在表面形成电介质膜5。 在作为取向多晶硅膜3a的电介质膜5上形成多晶硅膜4，形成取向多晶硅膜4a。 将作为上电极的定向多晶硅膜4a和作为下电极的取向多晶硅膜3a布线以获得具有电容器的半导体器件。 此外，可以在短时间内在短时间取向的多晶硅上制造高介电强度的薄膜晶体管。

公开(公告)号：US6069388A

公开(公告)日：2000-05-30

申请号：US984144

申请日：1997-12-03

Applicant: Yoshihiro Okusa ,  Tatsuya Yamauchi

Inventor： Yoshihiro Okusa ,  Tatsuya Yamauchi

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01G4/06

CPC classification number: H01L28/40 ,  H01L21/28158 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/78675

Abstract: On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600.degree. C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1.times.10.sup.20 atoms/cm.sup.3 to 1.times.10.sup.21 atoms/cm.sup.3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor. Further, a thin film transistor of a high dielectric strength can be produced in a short time on the polycrystalline silicon which is oriented in a short time.

Abstract translation: 在硅基板1上设置氧化硅膜2，通过低压CVD法在不超过10Pa的单硅烷分压和不低于600°的成膜温度下形成多晶硅膜3 C.多晶硅膜掺杂浓度为1×10 20原子/ cm 3至1×10 21原子/ cm 3的磷等杂质，形成磷硅玻璃膜6，去除后，多晶硅膜氧化成氧化 在表面形成电介质膜5。 在作为取向多晶硅膜3a的电介质膜5上形成多晶硅膜4，形成取向多晶硅膜4a。 将作为上电极的定向多晶硅膜4a和作为下电极的取向多晶硅膜3a布线以获得具有电容器的半导体器件。 此外，可以在短时间内在短时间取向的多晶硅上制造高介电强度的薄膜晶体管。