公开(公告)号：US08575277B2

公开(公告)日：2013-11-05

申请号：US12672152

申请日：2008-08-04

Applicant: Yasuhiro Kushida ,  Yuuichi Sugano ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

Inventor： Yasuhiro Kushida ,  Yuuichi Sugano ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

IPC: C08F8/04

CPC classification number: G11B7/2533 ,  B01J21/06 ,  B01J21/066 ,  B01J23/44 ,  B01J35/0066 ,  B01J37/0203 ,  C08F8/04 ,  C08F212/08 ,  C08F220/18 ,  C08F2800/10 ,  C08F2810/50 ,  C08F220/14

Abstract: A safe and stable production method of a hydrogenated polymer having high transparency, which is a production method of a hydrogenated polymer by hydrogenating aromatic rings of an aromatic vinyl compound-(meth)acrylate copolymer, in which (1) a solvent solution of the copolymer is added to a reactor, which has a solvent and a supported palladium catalyst charged therein, under a hydrogen atmosphere at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction, and then such an operation is performed repeatedly that (2) a hydrogenated polymer is obtained from 30 to 90% by mass of the resulting reaction mixed solution, and a fresh solvent solution of the copolymer is added to the reactor, in which the residual reaction mixed solution is left, or to which the residual reaction mixed solution is returned, at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction.

Abstract translation: 通过氢化芳香族乙烯基化合物 - （甲基）丙烯酸酯共聚物的芳香环，是氢化聚合物的制造方法的高透明性的安全稳定的制造方法，其中（1）共聚物的溶剂溶液 加入到反应器中，其中，在氢气氛下，以负载的钯催化剂的单位质量（g）的共聚物为0.01〜15g /小时，加入溶剂和负载的钯催化剂， 进行氢化反应，然后重复进行这样的操作：（2）得到的反应混合溶液的氢化聚合物的质量为30〜90质量％，将共聚物的新鲜溶剂溶液加入到反应器中， 残留的反应混合溶液返回残余反应混合溶液，以每单位质量（g）的共聚物计，为0.01〜15g /小时 报告钯催化剂，从而进行氢化反应。

公开(公告)号：US20110269912A1

公开(公告)日：2011-11-03

申请号：US12672152

申请日：2008-08-04

Applicant: Yasuhiro Kushida ,  Yuuichi Sugano ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

Inventor： Yasuhiro Kushida ,  Yuuichi Sugano ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

IPC: C08F8/04 ,  C08F220/18

CPC classification number: G11B7/2533 ,  B01J21/06 ,  B01J21/066 ,  B01J23/44 ,  B01J35/0066 ,  B01J37/0203 ,  C08F8/04 ,  C08F212/08 ,  C08F220/18 ,  C08F2800/10 ,  C08F2810/50 ,  C08F220/14

Abstract: A safe and stable production method of a hydrogenated polymer having high transparency, which is a production method of a hydrogenated polymer by hydrogenating aromatic rings of an aromatic vinyl compound-(meth)acrylate copolymer, in which (1) a solvent solution of the copolymer is added to a reactor, which has a solvent and a supported palladium catalyst charged therein, under a hydrogen atmosphere at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction, and then such an operation is performed repeatedly that (2) a hydrogenated polymer is obtained from 30 to 90% by mass of the resulting reaction mixed solution, and a fresh solvent solution of the copolymer is added to the reactor, in which the residual reaction mixed solution is left, or to which the residual reaction mixed solution is returned, at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction.

Abstract translation: 通过氢化芳香族乙烯基化合物 - （甲基）丙烯酸酯共聚物的芳香环，是氢化聚合物的制造方法的高透明性的安全稳定的制造方法，其中（1）共聚物的溶剂溶液 加入到反应器中，其中，在氢气氛下，以负载的钯催化剂的单位质量（g）的共聚物为0.01〜15g /小时，加入溶剂和负载的钯催化剂， 进行氢化反应，然后重复进行这样的操作：（2）得到的反应混合溶液的氢化聚合物的质量为30〜90质量％，将共聚物的新鲜溶剂溶液加入到反应器中， 残留的反应混合溶液返回残余反应混合溶液，以每单位质量（g）的共聚物计，为0.01〜15g /小时 报告钯催化剂，从而进行氢化反应。

公开(公告)号：US06316339B1

公开(公告)日：2001-11-13

申请号：US09513343

申请日：2000-02-25

Applicant: Yoshihiro Okusa ,  Tatsuya Yamauchi

Inventor： Yoshihiro Okusa ,  Tatsuya Yamauchi

IPC: H01L2120

CPC classification number: H01L28/40 ,  H01L21/28158 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/78675

Abstract: On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600° C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1×1020 atoms/cm3 to 1×1021 atoms/cm3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor. Further, a thin film transistor of a high dielectric strength can be produced in a short time on the polycrystalline silicon which is oriented in a short time.

Abstract translation: 在硅基板1上设置氧化硅膜2，通过低压CVD法在不超过10Pa的单硅烷分压和不低于600°的成膜温度下形成多晶硅膜3 C.多晶硅膜掺杂浓度为1×10 20原子/ cm 3至1×10 21原子/ cm 3的磷等杂质，形成磷硅玻璃膜6，去除后，多晶硅膜氧化成氧化 在表面形成电介质膜5。 在作为取向多晶硅膜3a的电介质膜5上形成多晶硅膜4，形成取向多晶硅膜4a。 将作为上电极的定向多晶硅膜4a和作为下电极的取向多晶硅膜3a布线以获得具有电容器的半导体器件。 此外，可以在短时间内在短时间取向的多晶硅上制造高介电强度的薄膜晶体管。

公开(公告)号：US07488782B2

公开(公告)日：2009-02-10

申请号：US11679222

申请日：2007-02-27

Applicant: Yuuichi Sugano ,  Yasuhiro Kushida ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

Inventor： Yuuichi Sugano ,  Yasuhiro Kushida ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

IPC: C08C19/02 ,  C08F220/18 ,  C08F12/08

CPC classification number: C08F8/04 ,  C08F212/08

Abstract: A process for producing a hydrogenated polymer, which includes a step of hydrogenating aromatic rings of an aromatic vinyl compound—(meth)acrylate copolymer. In the process, the copolymer having a ratio, A/B, of from 0.25 to 4.0 (A is a molar number of constitutional units derived from the (meth)acrylate monomer, and B is a molar number of constitutional units derived from the aromatic vinyl monomer) is hydrogenated in a solvent in the presence of a catalyst which is composed of zirconium oxide supporting palladium. By the process, a highly transparent, hydrogenated polymer is stably and rapidly produced for a long period of time or repeatedly.

Abstract translation: 一种氢化聚合物的制造方法，其包括使芳香族乙烯基化合物 - （甲基）丙烯酸酯共聚物的芳香环氢化的工序。 在该方法中，A / B比为0.25〜4.0（A为来自（甲基）丙烯酸酯单体的结构单元的摩尔数），B为衍生自芳香族化合物的结构单元的摩尔数 乙烯基单体）在溶剂中在由氧化锆担载钯组成的催化剂存在下氢化。 通过该方法，高度透明的氢化聚合物长时间或重复地稳定且快速地生产。

公开(公告)号：US20060205886A1

公开(公告)日：2006-09-14

申请号：US11374068

申请日：2006-03-14

Applicant: Tatsuya Yamauchi ,  Yasuhiro Kushida ,  Yuuichi Sugano ,  Yoshikazu Shima

Inventor： Tatsuya Yamauchi ,  Yasuhiro Kushida ,  Yuuichi Sugano ,  Yoshikazu Shima

IPC: C08F297/00

CPC classification number: C08F220/14 ,  B01J23/40 ,  B01J23/755 ,  C08F8/04 ,  C08F2800/10 ,  C08F2810/50 ,  G02B1/041 ,  G11B7/253 ,  C08F212/08 ,  C08L33/10

Abstract: In the production of a nuclear-hydrogenated polymer, the hydrogenation of an aromatic vinyl compound—(meth)acrylate copolymer is conducted in a mixed solvent comprising an ester compound and an alcohol compound in the presence of a catalyst. By this method, a highly transparent nuclear-hydrogenated polymer is produced safely, stably and quickly, even when the degree of nuclear-hydrogenation is low.

Abstract translation: 在制备核氢化聚合物中，芳族乙烯基化合物 - （甲基）丙烯酸酯共聚物的氢化在包含酯化合物和醇化合物的混合溶剂中在催化剂存在下进行。 通过该方法，即使核氢化程度低，安全，稳定，快速地制造高度透明的核氢化聚合物。

公开(公告)号：US20120191887A1

公开(公告)日：2012-07-26

申请号：US13347159

申请日：2012-01-10

Applicant: TATSUYA YAMAUCHI ,  Masahiro Kobayashi ,  Ryo Yamagata ,  Takashi Tamura ,  Kenichi Watanabe

Inventor： TATSUYA YAMAUCHI ,  Masahiro Kobayashi ,  Ryo Yamagata ,  Takashi Tamura ,  Kenichi Watanabe

IPC: G06F13/42

CPC classification number: G06F13/4282 ,  G06F2213/0026

Abstract: In order to suppress occurrence of a random pattern signal is suppressed without the use of a sideband signal in a long distance data transmission exceeding that defined in a PCIe interface specification, provided is a computer system, including a first component having a transmitting unit which transmits a control signal, a second component having a receiving unit which receives the control signal, a transmission path which connects the first component and the second component along which a signal is transmitted and received, wherein: in case of the transmitting unit of the first component transmits a ternary signal with three states of 0/1/Idle to the receiving unit of the second component, the transmitting unit of the first component substitutes a combination of signals representing 0/1 for a signal representing the Idle state, and transmits the substituted signals instead of the ternary signal to the receiving unit of the second component.

Abstract translation: 为了抑制随机模式信号的发生，在长距离数据传输中不使用超出PCIe接口规范中规定的边带信号的情况下，提供了一种计算机系统，其包括具有发送单元的第一部件 控制信号，具有接收控制信号的接收单元的第二分量，连接发送和接收信号的第一分量和第二分量的传输路径，其中：在第一分量的发送单元的情况下， 将具有0/1 /空闲三种状态的三态信号发送到第二分量的接收单元，第一分量的发送单元代表表示空闲状态的信号的代表0/1的信号的组合，并且发送取代 信号而不是第三组件的接收单元的三进制信号。

公开(公告)号：US6069388A

公开(公告)日：2000-05-30

申请号：US984144

申请日：1997-12-03

Applicant: Yoshihiro Okusa ,  Tatsuya Yamauchi

Inventor： Yoshihiro Okusa ,  Tatsuya Yamauchi

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01G4/06

CPC classification number: H01L28/40 ,  H01L21/28158 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/78675

Abstract: On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600.degree. C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1.times.10.sup.20 atoms/cm.sup.3 to 1.times.10.sup.21 atoms/cm.sup.3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor. Further, a thin film transistor of a high dielectric strength can be produced in a short time on the polycrystalline silicon which is oriented in a short time.

Abstract translation: 在硅基板1上设置氧化硅膜2，通过低压CVD法在不超过10Pa的单硅烷分压和不低于600°的成膜温度下形成多晶硅膜3 C.多晶硅膜掺杂浓度为1×10 20原子/ cm 3至1×10 21原子/ cm 3的磷等杂质，形成磷硅玻璃膜6，去除后，多晶硅膜氧化成氧化 在表面形成电介质膜5。 在作为取向多晶硅膜3a的电介质膜5上形成多晶硅膜4，形成取向多晶硅膜4a。 将作为上电极的定向多晶硅膜4a和作为下电极的取向多晶硅膜3a布线以获得具有电容器的半导体器件。 此外，可以在短时间内在短时间取向的多晶硅上制造高介电强度的薄膜晶体管。

公开(公告)号：US07446152B2

公开(公告)日：2008-11-04

申请号：US11374068

申请日：2006-03-14

Applicant: Tatsuya Yamauchi ,  Yasuhiro Kushida ,  Yuuichi Sugano ,  Yoshikazu Shima

Inventor： Tatsuya Yamauchi ,  Yasuhiro Kushida ,  Yuuichi Sugano ,  Yoshikazu Shima

IPC: C08F8/04

CPC classification number: C08F220/14 ,  B01J23/40 ,  B01J23/755 ,  C08F8/04 ,  C08F2800/10 ,  C08F2810/50 ,  G02B1/041 ,  G11B7/253 ,  C08F212/08 ,  C08L33/10

Abstract: In the production of a nuclear-hydrogenated polymer, the hydrogenation of an aromatic vinyl compound—(meth)acrylate copolymer is conducted in a mixed solvent comprising an ester compound and an alcohol compound in the presence of a catalyst. By this method, a highly transparent nuclear-hydrogenated polymer is produced safely, stably and quickly, even when the degree of nuclear-hydrogenation is low.

Abstract translation: 在制备核氢化聚合物中，芳族乙烯基化合物 - （甲基）丙烯酸酯共聚物的氢化在包含酯化合物和醇化合物的混合溶剂中在催化剂存在下进行。 通过该方法，即使核氢化程度低，安全，稳定，快速地制造高度透明的核氢化聚合物。

公开(公告)号：US20070185277A1

公开(公告)日：2007-08-09

申请号：US11679222

申请日：2007-02-27

Applicant: Yuuichi Sugano ,  Yasuhiro Kushida ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

Inventor： Yuuichi Sugano ,  Yasuhiro Kushida ,  Tatsuya Yamauchi ,  Hideyuki Sato ,  Yoshikazu Shima

IPC: C08F265/04

CPC classification number: C08F8/04 ,  C08F212/08

Abstract: A process for producing a hydrogenated polymer, which includes a step of hydrogenating aromatic rings of an aromatic vinyl compound—(meth)acrylate copolymer. In the process, the copolymer having a ratio, A/B, of from 0.25 to 4.0 (A is a molar number of constitutional units derived from the (meth)acrylate monomer, and B is a molar number of constitutional units derived from the aromatic vinyl monomer) is hydrogenated in a solvent in the presence of a catalyst which is composed of zirconium oxide supporting palladium. By the process, a highly transparent, hydrogenated polymer is stably and rapidly produced for a long period of time or repeatedly.

Abstract translation: 一种氢化聚合物的制造方法，其包括使芳香族乙烯基化合物 - （甲基）丙烯酸酯共聚物的芳香环氢化的工序。 在该方法中，A / B比为0.25〜4.0（A为来自（甲基）丙烯酸酯单体的结构单元的摩尔数），B为衍生自芳香族化合物的结构单元的摩尔数 乙烯基单体）在溶剂中在由氧化锆担载钯组成的催化剂存在下氢化。 通过该方法，高度透明的氢化聚合物长时间或重复地稳定且快速地生产。