公开(公告)号：US20090077524A1

公开(公告)日：2009-03-19

申请号：US12188198

申请日：2008-08-07

申请人： Yoshikazu Nagamura ,  Shogo Narukawa

发明人： Yoshikazu Nagamura ,  Shogo Narukawa

IPC分类号： G06F17/50

CPC分类号： G03F1/00

摘要： A technique for quantitatively expressing a manufacturing difficulty level of a photomask and for efficiently manufacturing the photomask is provided. A mask manufacturing difficulty level different for each mask layout, product, and mask layer is relatively recognized with a mask manufacturing load index calculated by a mask manufacturing load prediction system, and when layout correction is possible, the final layout is corrected to a layout with a low difficulty level, and a mask ordering party provides a mask manufacturer with information regarding the mask manufacturing difficulty level in an early stage. The mask manufacturing load index is expressed with a defect guarantee load index and a lithography load index.

摘要翻译： 提供了一种用于定量表达光掩模的制造难度级别并有效制造光掩模的技术。 通过由掩模制造负荷预测系统计算的掩模制造负荷指数，对于每个掩模布局，产品和掩模层而言，掩模制造难度水平不同，并且当布局校正可能时，最终布局被校正为具有 低难度级别和面罩订购方在早期阶段向掩模制造商提供关于掩模制造难度级别的信息。 掩模制造载荷指数用缺陷保证载荷指数和光刻载荷指数表示。

公开(公告)号：US20090042106A1

公开(公告)日：2009-02-12

申请号：US11878972

申请日：2007-07-30

申请人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

发明人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

IPC分类号： G03F9/00

CPC分类号： G03F1/74 ,  G03F1/32

摘要： A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.

公开(公告)号：US20080301622A1

公开(公告)日：2008-12-04

申请号：US12131582

申请日：2008-06-02

申请人： Shogo NARUKAWA ,  Yoshikazu Nagamura

发明人： Shogo NARUKAWA ,  Yoshikazu Nagamura

IPC分类号： G06F17/50

CPC分类号： G03F1/84

摘要： A method of determining defects in photomasks according to the present invention is designed to increase the yield of the manufacture of photomasks and to decrease the cost of inspecting the photomasks. In the method, circuit data 1 representing a circuit to be formed on a semiconductor substrate by photolithography is prepared, and layout data 2 is prepared from the circuit data 1. The layout data is converted to compensated layout data by performing RET. Further, mask-manufacturing data is developed from the compensated layout data. To form patterns on a semiconductor substrate by photolithography, attribute information is imparted to the mask-manufacturing data. The attribute information represents whether the patterns are adaptive to electrically active regions or electrically non-active region. In the mask-inspecting process 6, a criterion for determining whether the patterns formed on the photomasks have defects is changed in accordance with the attribute information.

摘要翻译： 根据本发明的确定光掩模中的缺陷的方法被设计为增加光掩模的制造的产量并降低检查光掩模的成本。 在该方法中，准备表示通过光刻形成在半导体衬底上的电路的电路数据1，并从电路数据1准备布局数据2.通过执行RET将布局数据转换为补偿布局数据。 此外，从补偿的布局数据开发掩模制造数据。 为了通过光刻法在半导体衬底上形成图案，赋予掩模制造数据赋予属性信息。 属性信息表示图案是否适应于电活性区域或电非活性区域。 在掩模检查过程6中，根据属性信息改变用于确定形成在光掩模上的图案是否具有缺陷的标准。

公开(公告)号：US20080020298A1

公开(公告)日：2008-01-24

申请号：US11878969

申请日：2007-07-30

申请人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

发明人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

IPC分类号： G03F9/00 ,  G06K9/00

CPC分类号： G03F1/74 ,  G03F1/32

摘要： A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a halt half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.

摘要翻译： 在停止半色调掩模的布线图案的清晰缺陷的中心处形成透光率在0至2％范围内的遮蔽区域。 在从没有缺陷的假想图案的边缘的内部延伸到边缘的外侧的区域中，形成具有在10至25％范围内的透射率的半透明区域，与阴影区域相邻。 以这种方式，在校正半色调掩模中的缺陷时，可以使缺陷的校正部分的加工精度可容许余量变大。

公开(公告)号：US06209553B1

公开(公告)日：2001-04-03

申请号：US09504728

申请日：2000-02-16

申请人： Yoshikazu Nagamura ,  Nobuyuki Yoshioka ,  Koji Yamanaka ,  Masaki Kusuhara

发明人： Yoshikazu Nagamura ,  Nobuyuki Yoshioka ,  Koji Yamanaka ,  Masaki Kusuhara

IPC分类号： B08B302

CPC分类号： G03F1/82 ,  G03F1/32 ,  Y10S134/902

摘要： Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

摘要翻译： 去除存在于光掩模表面上的有机物质和金属杂质。 用H2气溶解的水除去仍然粘附于光掩模表面的异物。 光掩模被干燥。 因此，提供了以少量的化学溶液和减少化学品和高纯度水量的方式来洗涤光掩模的方法，该方法能够获得等同于或优于常规方法的异物的效果。

公开(公告)号：US07582397B2

公开(公告)日：2009-09-01

申请号：US11878972

申请日：2007-07-30

申请人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

发明人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

IPC分类号： G03F1/00

CPC分类号： G03F1/74 ,  G03F1/32

摘要： A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.

摘要翻译： 在半色调掩模的布线图案的清晰缺陷的中心处形成具有0至2％范围内的透射率的阴影区域。 在从没有缺陷的假想图案的边缘的内部延伸到边缘的外侧的区域中，形成具有在10至25％范围内的透射率的半透明区域，与阴影区域相邻。 以这种方式，在校正半色调掩模中的缺陷时，可以使缺陷的校正部分的加工精度可容许余量变大。

公开(公告)号：US07264905B2

公开(公告)日：2007-09-04

申请号：US10714362

申请日：2003-11-17

申请人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

发明人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

IPC分类号： G03F1/00

CPC分类号： G03F1/74 ,  G03F1/32

摘要： A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.

摘要翻译： 在半色调掩模的布线图案的清晰缺陷的中心处形成具有0至2％范围内的透射率的阴影区域。 在从没有缺陷的假想图案的边缘的内部延伸到边缘的外侧的区域中，形成具有在10至25％范围内的透射率的半透明区域，与阴影区域相邻。 以这种方式，在校正半色调掩模中的缺陷时，可以使缺陷的校正部分的加工精度可容许余量变大。

公开(公告)号：US07926010B2

公开(公告)日：2011-04-12

申请号：US12131582

申请日：2008-06-02

申请人： Shogo Narukawa ,  Yoshikazu Nagamura

发明人： Shogo Narukawa ,  Yoshikazu Nagamura

IPC分类号： G06F17/50

CPC分类号： G03F1/84

摘要： A method of determining defects in photomasks according to the present invention is designed to increase the yield of the manufacture of photomasks and to decrease the cost of inspecting the photomasks. In the method, circuit data 1 representing a circuit to be formed on a semiconductor substrate by photolithography is prepared, and layout data 2 is prepared from the circuit data 1. The layout data is converted to compensated layout data by performing RET. Further, mask-manufacturing data is developed from the compensated layout data. To form patterns on a semiconductor substrate by photolithography, attribute information is imparted to the mask-manufacturing data. The attribute information represents whether the patterns are adaptive to electrically active regions or electrically non-active region. In the mask-inspecting process 6, a criterion for determining whether the patterns formed on the photomasks have defects is changed in accordance with the attribute information.

摘要翻译： 根据本发明的确定光掩模中的缺陷的方法被设计为增加光掩模的制造的产量并降低检查光掩模的成本。 在该方法中，准备表示通过光刻形成在半导体衬底上的电路的电路数据1，并从电路数据1准备布局数据2.通过执行RET将布局数据转换为补偿布局数据。 此外，从补偿的布局数据开发掩模制造数据。 为了通过光刻法在半导体衬底上形成图案，赋予掩模制造数据赋予属性信息。 属性信息表示图案是否适应于电活性区域或电非活性区域。 在掩模检查过程6中，根据属性信息改变用于确定形成在光掩模上的图案是否具有缺陷的标准。

公开(公告)号：US07585599B2

公开(公告)日：2009-09-08

申请号：US11878969

申请日：2007-07-30

申请人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

发明人： Yoshikazu Nagamura ,  Kouji Tange ,  Kouki Hayashi ,  Hidehiro Ikeda

IPC分类号： G03F1/00

CPC分类号： G03F1/74 ,  G03F1/32

摘要： A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.

公开(公告)号：US06877151B2

公开(公告)日：2005-04-05

申请号：US10214734

申请日：2002-08-09

申请人： Yoshikazu Nagamura

发明人： Yoshikazu Nagamura

IPC分类号： G01N21/956 ,  G01N21/95 ,  G03F1/84 ,  H01L21/027 ,  G06F17/50

CPC分类号： G01N21/9501

摘要： The coordinate value of the deficient area detected by a wafer inspecting apparatus and the wafer inspecting data are transmitted to a coordinate transforming computer by use of an inspection-data managing computer. The coordinate value detected by the wafer inspection based on the wafer inspecting data and the photomask inspecting data is transformed into the coordinate value on the photomask, to thereby analyze the deficient area of the photomask.

摘要翻译： 通过使用检查数据管理计算机将由晶片检查装置检测的缺陷区域和晶片检查数据的坐标值发送到坐标变换计算机。 基于晶片检查数据和光掩模检查数据的晶片检查检测出的坐标值被变换为光掩模上的坐标值，从而分析光掩模的不足区域。