公开(公告)号：US10771646B2

公开(公告)日：2020-09-08

申请号：US16155781

申请日：2018-10-09

Applicant: Tatsuya Ishii ,  Yoshiko Niki ,  Satoshi Iwanami ,  Osamu Inage ,  Shinichiroh Wada ,  Masamoto Nakazawa ,  Ryohma Ikemoto ,  Daisuke Nikaku

Inventor： Tatsuya Ishii ,  Yoshiko Niki ,  Satoshi Iwanami ,  Osamu Inage ,  Shinichiroh Wada ,  Masamoto Nakazawa ,  Ryohma Ikemoto ,  Daisuke Nikaku

IPC: H04N1/04 ,  H04N1/00 ,  H04N1/047 ,  H04N1/053

Abstract: A reading device includes a position reference member and a reader. The position reference member has a reference pattern that includes a line extending in a prescribed direction. The position reference member is configured to relatively move in a direction orthogonal to the prescribed direction. The reader includes a plurality of sensor chips, each of the sensor chips including a plurality of pixels. The reference pattern corresponds to each of the sensor chips of the reader.

公开(公告)号：US20190166274A1

公开(公告)日：2019-05-30

申请号：US16155781

申请日：2018-10-09

Applicant: Tatsuya Ishii ,  Yoshiko Niki ,  Satoshi Iwanami ,  Osamu Inage ,  Shinichiroh Wada ,  Masamoto Nakazawa ,  Ryohma Ikemoto ,  Daisuke Nikaku

Inventor： Tatsuya Ishii ,  Yoshiko Niki ,  Satoshi Iwanami ,  Osamu Inage ,  Shinichiroh Wada ,  Masamoto Nakazawa ,  Ryohma Ikemoto ,  Daisuke Nikaku

IPC: H04N1/00

CPC classification number: H04N1/00761 ,  H04N1/00034 ,  H04N1/00045 ,  H04N1/00063 ,  H04N1/00702 ,  H04N1/00774 ,  H04N1/00819 ,  H04N1/0473 ,  H04N1/053 ,  H04N2201/0006 ,  H04N2201/044 ,  H04N2201/0448 ,  H04N2201/04715

Abstract: A reading device includes a position reference member and a reader. The position reference member has a reference pattern that includes a line extending in a prescribed direction. The position reference member is configured to relatively move in a direction orthogonal to the prescribed direction. The reader includes a plurality of sensor chips, each of the sensor chips including a plurality of pixels. The reference pattern corresponds to each of the sensor chips of the reader.

公开(公告)号：US5098852A

公开(公告)日：1992-03-24

申请号：US548548

申请日：1990-07-05

Applicant: Yoshiko Niki ,  Soichi Nadahara ,  Masaharu Watanabe

Inventor： Yoshiko Niki ,  Soichi Nadahara ,  Masaharu Watanabe

IPC: H01L21/265 ,  H01L21/322 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC classification number: H01L21/3221 ,  H01L21/26513

Abstract: A method of manufacturing a semiconductor device includes forming desired semiconductor elements in a major surface region of a semiconductor substrate, and ion-implanting a selected element into the semiconductor substrate from the major surface of the substrate to form an ion-implanted layer by the implanted element. A heat treatment is performed to the ion-implanted substrate, causing the ion-implanted layer to getter contaminant heavy metals.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底的主表面区域形成期望的半导体元件，并且从所述衬底的主表面离子注入到所述半导体衬底中的所选择的元件，以通过所述植入的所述衬底形成离子注入层 元件。 对离子注入的基板进行热处理，使离子注入层吸收污染的重金属。