公开(公告)号：US08406079B2

公开(公告)日：2013-03-26

申请号：US12970228

申请日：2010-12-16

申请人： Young Park Kim ,  Duk Su Chun

发明人： Young Park Kim ,  Duk Su Chun

IPC分类号： G11C8/18

CPC分类号： G11C7/22 ,  G11C7/222 ,  G11C8/18

摘要： Various embodiments of a control circuit for controlling an address output timing of a semiconductor device are disclosed. In one exemplary embodiment, the circuit may include: a timing signal generation unit configured to decode operation specification information of a semiconductor device and generate a timing signal by delaying a read command or a write command based on a decoding result of the operation specification information; a storage control signal generation unit configured to generate a storage control signal in response to the read command or the write command; an output control signal generation unit configured to generate an output control signal in response to the timing signal; and a storage/output unit configured to store an address in response to the storage control signal, and output the stored address as a timing-adjusted address in response to the output control signal.

摘要翻译： 公开了用于控制半导体器件的地址输出定时的控制电路的各种实施例。 在一个示例性实施例中，电路可以包括：定时信号生成单元，被配置为解码半导体器件的操作指定信息，并且通过基于操作指定信息的解码结果延迟读取命令或写入命令来生成定时信号; 存储控制信号生成单元，被配置为响应于所述读取命令或所述写入命令生成存储控制信号; 输出控制信号生成单元，被配置为响应于所述定时信号而生成输出控制信号; 以及存储/输出单元，被配置为响应于存储控制信号存储地址，并且响应于输出控制信号而将存储的地址作为定时调整的地址输出。

公开(公告)号：US20110271133A1

公开(公告)日：2011-11-03

申请号：US12970228

申请日：2010-12-16

申请人： Young Park Kim ,  Duk Su Chun

发明人： Young Park Kim ,  Duk Su Chun

IPC分类号： G06F1/12

CPC分类号： G11C7/22 ,  G11C7/222 ,  G11C8/18

摘要： Various embodiments of a control circuit for controlling an address output timing of a semiconductor device are disclosed. In one exemplary embodiment, the circuit may include: a timing signal generation unit configured to decode operation specification information of a semiconductor device and generate a timing signal by delaying a read command or a write command based on a decoding result of the operation specification information; a storage control signal generation unit configured to generate a storage control signal in response to the read command or the write command; an output control signal generation unit configured to generate an output control signal in response to the timing signal; and a storage/output unit configured to store an address in response to the storage control signal, and output the stored address as a timing-adjusted address in response to the output control signal.

摘要翻译： 公开了用于控制半导体器件的地址输出定时的控制电路的各种实施例。 在一个示例性实施例中，电路可以包括：定时信号生成单元，被配置为解码半导体器件的操作指定信息，并且通过基于操作指定信息的解码结果延迟读取命令或写入命令来生成定时信号; 存储控制信号生成单元，被配置为响应于所述读取命令或所述写入命令生成存储控制信号; 输出控制信号生成单元，被配置为响应于所述定时信号而生成输出控制信号; 以及存储/输出单元，被配置为响应于存储控制信号存储地址，并且响应于输出控制信号而将存储的地址作为定时调整的地址输出。

公开(公告)号：US20110074369A1

公开(公告)日：2011-03-31

申请号：US12649193

申请日：2009-12-29

申请人： Yong Kee KWON ,  Hyung Dong Lee ,  Young Park Kim

发明人： Yong Kee KWON ,  Hyung Dong Lee ,  Young Park Kim

IPC分类号： G05F1/00 ,  H01L23/58

CPC分类号： G11C11/4074 ,  G11C5/147 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028

摘要： A semiconductor apparatus includes a reference voltage generation unit, a comparison voltage generation unit, and a calibration unit. The reference voltage generation unit is disposed in a reference die and configured to generate a reference voltage. The comparison voltage generation unit is disposed in a die stacked on the reference die and configured to generate a comparison voltage in response to a calibration control signal. The calibration unit is configured to compare a level of the reference voltage with a level of the comparison voltage and generate the calibration control signal.

摘要翻译： 半导体装置包括参考电压产生单元，比较电压产生单元和校准单元。 参考电压产生单元设置在参考管芯中，并被配置为产生参考电压。 比较电压产生单元设置在堆叠在参考管芯上的管芯中，并被配置为响应校准控制信号产生比较电压。 校准单元被配置为将参考电压的电平与比较电压的电平进行比较并产生校准控制信号。

公开(公告)号：US08154019B2

公开(公告)日：2012-04-10

申请号：US12649193

申请日：2009-12-29

申请人： Yong Kee Kwon ,  Hyung Dong Lee ,  Young Park Kim

发明人： Yong Kee Kwon ,  Hyung Dong Lee ,  Young Park Kim

IPC分类号： H01L23/58

CPC分类号： G11C11/4074 ,  G11C5/147 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028

摘要： A semiconductor apparatus includes a reference voltage generation unit, a comparison voltage generation unit, and a calibration unit. The reference voltage generation unit is disposed in a reference die and configured to generate a reference voltage. The comparison voltage generation unit is disposed in a die stacked on the reference die and configured to generate a comparison voltage in response to a calibration control signal. The calibration unit is configured to compare a level of the reference voltage with a level of the comparison voltage and generate the calibration control signal.

摘要翻译： 半导体装置包括参考电压产生单元，比较电压产生单元和校准单元。 参考电压产生单元设置在参考管芯中，并被配置为产生参考电压。 比较电压产生单元设置在堆叠在参考管芯上的管芯中，并被配置为响应校准控制信号产生比较电压。 校准单元被配置为将参考电压的电平与比较电压的电平进行比较并产生校准控制信号。