公开(公告)号：US20090091974A1

公开(公告)日：2009-04-09

申请号：US12219663

申请日：2008-07-25

申请人： Ju-hee Park ,  Young-moon Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song

发明人： Ju-hee Park ,  Young-moon Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C7/00

CPC分类号： G11C11/5628 ,  G11C2211/5621 ,  G11C2211/5648

摘要： A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.

摘要翻译： 一种编程非易失性存储单元的方法包括通过将非易失性存储单元的阈值电压设置为多个阈值电压分布中的第一个内的第一电压电平来对第一位多位数据进行编程。 通过基于第二位的值将阈值电压设置为第二电压电平来编程多位数据的第二位。 如果第二位是第二值，则第二电压电平与第一电压电平相同，如果第二位是第二值，则第二电压电平在多个阈值电压分布的一秒内。 通过将阈值电压设置为基于第三位的值的第三电压电平来编程多位数据的第三位。

公开(公告)号：US20070287479A1

公开(公告)日：2007-12-13

申请号：US11729476

申请日：2007-03-29

申请人： Young-Moon Kim

发明人： Young-Moon Kim

IPC分类号： H04Q7/20

CPC分类号： H04M1/72552 ,  H04M1/56

摘要： Provided is a method and apparatus of writing a message in a mobile communication terminal. The method includes checking whether a button input has been made during an idle state. A number string for a dialing according to the button input and a character string for writing the message on a main screen are simultaneously displayed, when the button input has been made. The short messaging mode can be easily and quickly accessed and used.

摘要翻译： 提供了一种在移动通信终端中写入消息的方法和装置。 该方法包括检查在空闲状态期间是否进行按钮输入。 当进行按钮输入时，同时显示用于根据按钮输入的拨号的数字串和用于在主屏幕上写入消息的字符串。 短消息模式可以方便快捷地访问和使用。

公开(公告)号：US07885107B2

公开(公告)日：2011-02-08

申请号：US12219663

申请日：2008-07-25

申请人： Ju-hee Park ,  Young-moon Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song

发明人： Ju-hee Park ,  Young-moon Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C11/5628 ,  G11C2211/5621 ,  G11C2211/5648

摘要： A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.

摘要翻译： 一种编程非易失性存储单元的方法包括通过将非易失性存储单元的阈值电压设置为多个阈值电压分布中的第一个内的第一电压电平来对第一位多位数据进行编程。 通过基于第二位的值将阈值电压设置为第二电压电平来编程多位数据的第二位。 如果第二位是第二值，则第二电压电平与第一电压电平相同，如果第二位是第二值，则第二电压电平在多个阈值电压分布的一秒内。 通过将阈值电压设置为基于第三位的值的第三电压电平来编程多位数据的第三位。