公开(公告)号：US20080283897A1

公开(公告)日：2008-11-20

申请号：US11857978

申请日：2007-09-19

Applicant: Yu-Sheng Ding ,  Ching-Nan Hsiao ,  Chung-Lin Huang

Inventor： Yu-Sheng Ding ,  Ching-Nan Hsiao ,  Chung-Lin Huang

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/4983 ,  H01L21/28061 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/4933 ,  H01L29/66545 ,  H01L29/7887

Abstract: The invention provides a flash memory device and a method for fabricating thereof. The device comprises a gate stack layer of a gate dielectric layer and a gate polysilicon layer formed on a substrate, a stack layer comprising a floating polysilicon layer and gate spacer formed on the sidewall of the gate stack layer. A metal layer is formed on the gate stack layer and is utilized in place of a portion of the gate polysilicon layer. Because the metal layer has relatively high conductivity and is electrically connected to a metal plug later formed, current velocity of the device is increased to improve performance.

Abstract translation: 本发明提供一种闪存器件及其制造方法。 该器件包括形成在衬底上的栅极电介质层和栅极多晶硅层的栅极堆叠层，包括形成在栅极堆叠层的侧壁上的浮置多晶硅层和栅极间隔区的堆叠层。 在栅叠层上形成金属层，代替栅极多晶硅层的一部分。 因为金属层具有较高的导电性并且电连接到稍后形成的金属塞上，因此提高了器件的电流速度以提高性能。