Transistor devices configured to operate above a first cutoff frequency
    1.
    发明授权
    Transistor devices configured to operate above a first cutoff frequency 有权
    晶体管器件被配置为在第一截止频率之上操作

    公开(公告)号:US07498872B2

    公开(公告)日:2009-03-03

    申请号:US11413833

    申请日:2006-04-28

    IPC分类号: H01L29/00

    CPC分类号: G06F17/5063

    摘要: Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.

    摘要翻译: 晶体管器件被配置为在高于典型的第一截止频率的频率下工作。 一方面,提供一种用于配置晶体管器件以在第一截止频率之上操作的方法。 该方法包括为与晶体管器件相关联的晶体管选择期望的工作频率范围和期望的输出功率,分析相位速度失配对多个不同尺寸晶体管的总体增益的影响,以及评估初级和次级增益区域 的多个不同尺寸的晶体管。 该方法还包括选择晶体管,其大小基于对相位速度失配和初级和次级增益区域的评估的分析,在等于或接近期望的工作频率范围提供期望的输出功率。

    Transistor devices configured to operate above a first cutoff frequency
    2.
    发明申请
    Transistor devices configured to operate above a first cutoff frequency 有权
    晶体管器件被配置为在第一截止频率之上操作

    公开(公告)号:US20070252643A1

    公开(公告)日:2007-11-01

    申请号:US11413833

    申请日:2006-04-28

    IPC分类号: H03F3/14

    CPC分类号: G06F17/5063

    摘要: Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.

    摘要翻译: 晶体管器件被配置为在高于典型的第一截止频率的频率下工作。 一方面,提供一种用于配置晶体管器件以在第一截止频率之上操作的方法。 该方法包括为与晶体管器件相关联的晶体管选择期望的工作频率范围和期望的输出功率,分析相位速度失配对多个不同尺寸晶体管的总体增益的影响,以及评估初级和次级增益区域 的多个不同尺寸的晶体管。 该方法还包括选择晶体管,其大小基于对相位速度失配和初级和次级增益区域的评估的分析,在等于或接近期望的工作频率范围提供期望的输出功率。