Method for removing a thin film layer
    1.
    发明授权
    Method for removing a thin film layer 失效
    去除薄膜层的方法

    公开(公告)号:US5656229A

    公开(公告)日:1997-08-12

    申请号:US459806

    申请日:1995-06-02

    IPC分类号: B23K26/08 G03F9/00

    CPC分类号: B23K26/0823 G03F9/70

    摘要: A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.

    摘要翻译: 一种方法和装置,其中薄膜层,例如覆盖至少选定的图案的抗蚀剂的抗蚀剂,例如晶片的表面上,例如晶片,相对于每个图案在预定位置处从有限的局部部分移除, 作为响应于能量束的照射的图案的对准标记部分。 基板位于转台上,并且在转台上检测图案的选定部分的位置。 根据所选择的部分的检测位置和图案的设计坐标位置信息,需要去除薄膜层的局部部分的位置通过基于转弯旋转中心的极坐标系来确定 使得根据确定的极坐标值,能量束被照射在局部部分的薄膜层上。

    Method and apparatus for removing a thin film layer
    2.
    发明授权
    Method and apparatus for removing a thin film layer 失效
    去除薄膜层的方法和装置

    公开(公告)号:US5686211A

    公开(公告)日:1997-11-11

    申请号:US542684

    申请日:1995-10-13

    摘要: A method and apparatus whereby a thin film layer covering a plurality of marks of a given pattern formed on a surface of a substrate is selectively removed from each of a plurality of localized areas each including one of the marks by irradiation of an energy beam. The mark is detected by a mark detecting system in a noncontact manner during the irradiation of the energy beam or during a time that the irradiation is stopped, thereby producing an electric signal including information corresponding to a change of an optical or physical property of the localized area. In accordance with the electric signal produced by the mark detecting system, it is evaluated whether the information indicative of the optical or physical property of the mark has attained a predetermined condition for a predetermined information processing application of the information. In accordance with a result of the evaluation, it is selected whether the irradiation of the energy beam onto the localized area is to be effected continuously.

    摘要翻译: 通过照射能量束,通过从多个局部区域中的每一个选择性地去除覆盖在衬底表面上形成的给定图案的多个标记的薄膜层的方法和装置。 在能量束的照射期间或在照射停止的时间期间,通过标记检测系统以非接触方式检测标记,从而产生包括对应于局部化的光学或物理性质的变化的信息的电信号 区。 根据由标记检测系统产生的电信号,对于信息的预定信息处理应用,评估指示标记的光学或物理属性的信息是否已经达到预定条件。 根据评价结果,选择能否连续地对能量束照射到局部区域上。

    Apparatus for removing a thin film layer
    3.
    发明授权
    Apparatus for removing a thin film layer 失效
    用于去除薄膜层的装置

    公开(公告)号:US5597590A

    公开(公告)日:1997-01-28

    申请号:US563349

    申请日:1995-11-28

    IPC分类号: B23K26/08 G03F9/00

    CPC分类号: B23K26/0823 G03F9/70

    摘要: A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.

    摘要翻译: 一种方法和装置,其中薄膜层,例如覆盖至少选定的图案的抗蚀剂的抗蚀剂,例如晶片的表面上,例如晶片,相对于每个图案在预定位置处从有限的局部部分移除, 作为响应于能量束的照射的图案的对准标记部分。 基板位于转台上,并且在转台上检测图案的选定部分的位置。 根据所选择的部分的检测位置和图案的设计坐标位置信息,需要去除薄膜层的局部部分的位置通过基于转弯旋转中心的极坐标系来确定 使得根据确定的极坐标值,能量束被照射在局部部分的薄膜层上。