摘要:
A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.
摘要:
A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.
摘要:
There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.
摘要:
An exposure apparatus includes an optical element via which a patterned beam is projected onto a substrate through exposure liquid filled in a space between the optical element and the substrate. The apparatus also includes a member having a surface and movable to a position at which the surface of the member faces the optical element. The apparatus also includes a cleaning system which cleans the surface of the member.
摘要:
An object is to provide a high-resolution and economical exposure method suitable for use in formation of a fine pattern for making up an electronic device. Two diffraction gratings (P1, P2) are located in series in an optical path; the two diffraction gratings (P1, P2) and a wafer or the like (W) for making up an electronic device are arranged with a predetermined spacing; a light-dark pattern of interference fringes generated by the diffraction gratings (P1, P2) is transferred onto the wafer or the like (W) to effect exposure. The exposure is done while changing a positional relation between the wafer or the like (W) and the diffraction gratings (P1, P2) according to need.
摘要:
There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.
摘要:
There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.
摘要:
A mask stage RS1 and a substrate stage WS1 are synchronously moved, and a mask stage RS2 and a substrate stage RS2 are synchronously moved, in a state in which a mask on the mask stage RS1 and a mask on the mask stage RS2 are irradiated with illumination light beams from illumination optical systems IOP1, IOP2 respectively. The reaction force on a base board due to the movement of the stages can be canceled to suppress the vibration of an exposure apparatus by moving the mask stage RS1 and the mask stage RS2 in mutually opposite directions. The throughput can be improved by performing alignment operation on substrate stages WS3, WS4 concurrently with the exposure operation.
摘要:
In a lithographic process for fabrication of integrated circuit chips, a projection exposure machine is used to print a mask pattern onto each of a plurality of shot areas defined on a substrate, where an alignment method for establishing alignment between each shot area on the substrate and the mask pattern is performed. The alignment method comprises the step of forming on the substrate a regular pattern which comprises a plurality of pattern elements regularly distributed over the plurality of shot areas, and the step of performing an alignment operation based on the position of the regular pattern so as to establish alignment between each of the plurality of shot areas and the mask pattern. An exposure apparatus may be used to form the regular pattern on the substrate. The exposure apparatus comprises a light source for emitting a primary light beam, a beam-splitting optical system for splitting the primary light beam into a plurality of secondary light beams which are coherent with each other, and an objective optical system for modifying each secondary light beam into a substantially plane wave light beam, and for illuminating a region of a photoresist-coated substrate with the secondary light beams at different incident angles, the region of the substrate extending over a plurality of shot areas defined on the substrate, wherein the region is exposed to a regular pattern of light of interference fringes produced on the substrate from the plurality of secondary light beams.