Method for removing a thin film layer
    1.
    发明授权
    Method for removing a thin film layer 失效
    去除薄膜层的方法

    公开(公告)号:US5656229A

    公开(公告)日:1997-08-12

    申请号:US459806

    申请日:1995-06-02

    IPC分类号: B23K26/08 G03F9/00

    CPC分类号: B23K26/0823 G03F9/70

    摘要: A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.

    摘要翻译: 一种方法和装置,其中薄膜层,例如覆盖至少选定的图案的抗蚀剂的抗蚀剂,例如晶片的表面上,例如晶片,相对于每个图案在预定位置处从有限的局部部分移除, 作为响应于能量束的照射的图案的对准标记部分。 基板位于转台上,并且在转台上检测图案的选定部分的位置。 根据所选择的部分的检测位置和图案的设计坐标位置信息,需要去除薄膜层的局部部分的位置通过基于转弯旋转中心的极坐标系来确定 使得根据确定的极坐标值,能量束被照射在局部部分的薄膜层上。

    Apparatus for removing a thin film layer
    2.
    发明授权
    Apparatus for removing a thin film layer 失效
    用于去除薄膜层的装置

    公开(公告)号:US5597590A

    公开(公告)日:1997-01-28

    申请号:US563349

    申请日:1995-11-28

    IPC分类号: B23K26/08 G03F9/00

    CPC分类号: B23K26/0823 G03F9/70

    摘要: A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.

    摘要翻译: 一种方法和装置,其中薄膜层,例如覆盖至少选定的图案的抗蚀剂的抗蚀剂,例如晶片的表面上,例如晶片,相对于每个图案在预定位置处从有限的局部部分移除, 作为响应于能量束的照射的图案的对准标记部分。 基板位于转台上,并且在转台上检测图案的选定部分的位置。 根据所选择的部分的检测位置和图案的设计坐标位置信息,需要去除薄膜层的局部部分的位置通过基于转弯旋转中心的极坐标系来确定 使得根据确定的极坐标值,能量束被照射在局部部分的薄膜层上。

    Light exposure apparatus
    9.
    发明授权
    Light exposure apparatus 失效
    在照明区域中曝光光的强度分布变化的扫描曝光装置和方法。

    公开(公告)号:US06713747B2

    公开(公告)日:2004-03-30

    申请号:US10207832

    申请日:2002-07-31

    申请人: Akikazu Tanimoto

    发明人: Akikazu Tanimoto

    IPC分类号: G01J132

    摘要: A scanning exposure apparatus and method uses an optical member to change an intensity distribution of exposure light in an illumination region.

    摘要翻译: 扫描曝光装置和方法使用光学部件来改变照明区域中的曝光光的强度分布。

    Alignment method and exposure apparatus for use in such alignment method
    10.
    发明授权
    Alignment method and exposure apparatus for use in such alignment method 失效
    对准方法和用于这种对准方法的曝光装置

    公开(公告)号:US5906901A

    公开(公告)日:1999-05-25

    申请号:US580886

    申请日:1995-12-29

    申请人: Akikazu Tanimoto

    发明人: Akikazu Tanimoto

    摘要: In a lithographic process for fabrication of integrated circuit chips, a projection exposure machine is used to print a mask pattern onto each of a plurality of shot areas defined on a substrate, where an alignment method for establishing alignment between each shot area on the substrate and the mask pattern is performed. The alignment method comprises the step of forming on the substrate a regular pattern which comprises a plurality of pattern elements regularly distributed over the plurality of shot areas, and the step of performing an alignment operation based on the position of the regular pattern so as to establish alignment between each of the plurality of shot areas and the mask pattern. An exposure apparatus may be used to form the regular pattern on the substrate. The exposure apparatus comprises a light source for emitting a primary light beam, a beam-splitting optical system for splitting the primary light beam into a plurality of secondary light beams which are coherent with each other, and an objective optical system for modifying each secondary light beam into a substantially plane wave light beam, and for illuminating a region of a photoresist-coated substrate with the secondary light beams at different incident angles, the region of the substrate extending over a plurality of shot areas defined on the substrate, wherein the region is exposed to a regular pattern of light of interference fringes produced on the substrate from the plurality of secondary light beams.

    摘要翻译: 在用于制造集成电路芯片的光刻工艺中,使用投影曝光机将掩模图案印刷到限定在基板上的多个照射区域中的每一个上,其中用于在基板上的每个照射区域之间建立对准的对准方法和 执行掩模图案。 对准方法包括在基板上形成规则图案的步骤,该规则图案包括规则分布在多个拍摄区域上的多个图案元素,以及基于规则图案的位置执行对准操作的步骤,以便建立 多个拍摄区域中的每一个与掩模图案之间的对准。 可以使用曝光装置在基板上形成规则图案。 曝光装置包括用于发射主光束的光源,用于将主光束分离成彼此相干的多个次级光束的分束光学系统,以及用于修改每个二次光的物镜光学系统 射入基本上平面的波长光束中,并且用不同入射角的二次光束照射光致抗蚀剂涂覆的基底的区域,衬底的区域延伸在限定在衬底上的多个注射区域上,其中区域 暴露于从多个次级光束在基板上产生的干涉条纹的规则图案。