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公开(公告)号:US20120061566A1
公开(公告)日:2012-03-15
申请号:US13300117
申请日:2011-11-18
申请人: Minoru YAMAZAKI , Akira IKEGAMI , Hideyuki KAZUMI , Manabu YANO , Kazunari ASAO , Takeshi MIZUNO , Yuki OJIMA
发明人: Minoru YAMAZAKI , Akira IKEGAMI , Hideyuki KAZUMI , Manabu YANO , Kazunari ASAO , Takeshi MIZUNO , Yuki OJIMA
IPC分类号: H01J37/26
CPC分类号: H01J37/28 , H01J37/244 , H01J37/265 , H01J37/29 , H01J37/3045 , H01J2237/04735 , H01J2237/04756 , H01J2237/1501 , H01J2237/24578 , H01J2237/24592
摘要: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要翻译: 本发明的目的是提供一种适用于监视显微镜本身的装置条件的扫描电子显微镜,而不管充电的存在,试样的倾斜度等。 为了实现该目的,提出了一种扫描电子显微镜,其包括基于在到达样品之前用电子束反射获得的信息来监测设备条件的功能。 具体而言,例如,在向电子束到达试样前向试样施加负电压以反射电子束的同时,向偏光器供给预定的信号进行取向,扫描型电子显微镜观察检测到的位置的变化, 电子束的反射电子。 如果上述预定信号处于正确执行对准的状态,则检测到的电子位置的变化反映了轴的偏差。
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公开(公告)号:US08080790B2
公开(公告)日:2011-12-20
申请号:US12392563
申请日:2009-02-25
申请人: Minoru Yamazaki , Akira Ikegami , Hideyuki Kazumi , Manabu Yano , Kazunari Asao , Takeshi Mizuno , Yuki Ojima
发明人: Minoru Yamazaki , Akira Ikegami , Hideyuki Kazumi , Manabu Yano , Kazunari Asao , Takeshi Mizuno , Yuki Ojima
IPC分类号: H01J37/29
CPC分类号: H01J37/28 , H01J37/244 , H01J37/265 , H01J37/29 , H01J37/3045 , H01J2237/04735 , H01J2237/04756 , H01J2237/1501 , H01J2237/24578 , H01J2237/24592
摘要: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要翻译: 本发明的目的是提供一种适用于监视显微镜本身的装置条件的扫描电子显微镜,而不管充电的存在,试样的倾斜度等。 为了实现该目的,提出了一种扫描电子显微镜,其包括基于在到达样品之前用电子束反射获得的信息来监测设备条件的功能。 具体而言,例如,在向电子束到达试样前向试样施加负电压以反射电子束的同时,向偏光器供给预定的信号进行取向,扫描型电子显微镜观察检测到的位置的变化, 电子束的反射电子。 如果上述预定信号处于正确执行对准的状态,则检测到的电子位置的变化反映了轴的偏差。
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公开(公告)号:US07723681B2
公开(公告)日:2010-05-25
申请号:US11871687
申请日:2007-10-12
申请人: Yuki Ojima , Satoru Iwama , Akira Ikegami
发明人: Yuki Ojima , Satoru Iwama , Akira Ikegami
IPC分类号: G01N23/04
CPC分类号: G01N23/04
摘要: For the purpose of repeatedly observing the bottom of a contact hole with a high aspect ratio, the potential of an electrostatic charge in each of a pattern to be observed and a vicinity of a range to be observed is stabilized by pre-charging a range on which to irradiate a beam of electrons while changing the range on a step-by-step basis.
摘要翻译: 为了重复观察高纵横比的接触孔的底部,通过预充电一个范围来稳定要观察的图案和要观察的范围附近的静电电荷的电位 其在逐步改变范围的同时照射电子束。
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公开(公告)号:US06929892B2
公开(公告)日:2005-08-16
申请号:US10894044
申请日:2004-07-20
申请人: Chie Shishido , Hidetoshi Morokuma , Yuki Ojima , Maki Tanaka , Wataru Nagatomo
发明人: Chie Shishido , Hidetoshi Morokuma , Yuki Ojima , Maki Tanaka , Wataru Nagatomo
IPC分类号: H01L21/66 , G03C5/00 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号: G03F7/70641 , G03F7/705 , G03F7/70625 , Y10S430/143
摘要: In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.
摘要翻译: 在曝光处理的监视中,通过曝光剂量的波动,焦点位置的横截面形状大幅度变化的高度隔离图案是观察对象。 特别地,为了检测从锥形轮廓到逆锥形轮廓的截面抗蚀剂形状的变化,采用以下观察方法之一来获得观察数据:(1)通过使用抗蚀剂图案的倾斜图像成像 倾斜成像电子显微镜,(2)抗蚀剂图案的电子束图像在用于在电子束信号波形上产生不对称的成像条件下成像,并且(3)通过光学测量系统获得抗蚀剂图案的散射特性数据。 将观测数据应用于根据曝光条件预先创建的模型数据,以估计曝光剂量和焦点位置的波动。
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公开(公告)号:US08487253B2
公开(公告)日:2013-07-16
申请号:US13300117
申请日:2011-11-18
申请人: Minoru Yamazaki , Akira Ikegami , Hideyuki Kazumi , Manabu Yano , Kazunari Asao , Takeshi Mizuno , Yuki Ojima
发明人: Minoru Yamazaki , Akira Ikegami , Hideyuki Kazumi , Manabu Yano , Kazunari Asao , Takeshi Mizuno , Yuki Ojima
CPC分类号: H01J37/28 , H01J37/244 , H01J37/265 , H01J37/29 , H01J37/3045 , H01J2237/04735 , H01J2237/04756 , H01J2237/1501 , H01J2237/24578 , H01J2237/24592
摘要: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要翻译: 本发明的目的是提供一种适用于监视显微镜本身的装置条件的扫描电子显微镜,而不管充电的存在,试样的倾斜度等。 为了实现该目的,提出了一种扫描电子显微镜,其包括基于在到达样品之前用电子束反射获得的信息来监测设备条件的功能。 具体而言,例如,在向电子束到达检体的同时向试样施加负电压以反射电子束的同时,向偏转器供给预定信号进行取向,扫描电子显微镜监视检测到的位置的变化, 电子束的反射电子。 如果上述预定信号处于正确执行对准的状态,则检测到的电子位置的变化反映了轴的偏差。
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公开(公告)号:US20090224170A1
公开(公告)日:2009-09-10
申请号:US12392563
申请日:2009-02-25
申请人: Minoru YAMAZAKI , Akira Ikegami , Hideyuki Kazumi , Manabu Yano , Kazunari Asao , Takeshi Mizuno , Yuki Ojima
发明人: Minoru YAMAZAKI , Akira Ikegami , Hideyuki Kazumi , Manabu Yano , Kazunari Asao , Takeshi Mizuno , Yuki Ojima
CPC分类号: H01J37/28 , H01J37/244 , H01J37/265 , H01J37/29 , H01J37/3045 , H01J2237/04735 , H01J2237/04756 , H01J2237/1501 , H01J2237/24578 , H01J2237/24592
摘要: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要翻译: 本发明的目的是提供一种适用于监视显微镜本身的装置条件的扫描电子显微镜,而不管充电的存在,试样的倾斜度等。 为了实现该目的,提出了一种扫描电子显微镜,其包括基于在到达样品之前用电子束反射获得的信息来监测设备条件的功能。 具体而言,例如,在向电子束到达检体的同时向试样施加负电压以反射电子束的同时,向偏转器供给预定信号进行取向,扫描电子显微镜监视检测到的位置的变化, 电子束的反射电子。 如果上述预定信号处于正确执行对准的状态,则检测到的电子位置的变化反映了轴的偏差。
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公开(公告)号:US20080265160A1
公开(公告)日:2008-10-30
申请号:US11871687
申请日:2007-10-12
申请人: Yuki OJIMA , Satoru Iwama , Akira Ikegami
发明人: Yuki OJIMA , Satoru Iwama , Akira Ikegami
IPC分类号: G01N23/04
CPC分类号: G01N23/04
摘要: For the purpose of repeatedly observing the bottom of a contact hole with a high aspect ratio, the potential of an electrostatic charge in each of a pattern to be observed and a vicinity of a range to be observed is stabilized by pre-charging a range on which to irradiate a beam of electrons while changing the range on a step-by-step basis.
摘要翻译: 为了重复观察高纵横比的接触孔的底部,通过预充电一个范围来稳定要观察的图案和要观察的范围附近的静电电荷的电位 其在逐步改变范围的同时照射电子束。
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公开(公告)号:US20050037271A1
公开(公告)日:2005-02-17
申请号:US10894044
申请日:2004-07-20
申请人: Chie Shishido , Hidetoshi Morokuma , Yuki Ojima , Maki Tanaka , Wataru Nagatomo
发明人: Chie Shishido , Hidetoshi Morokuma , Yuki Ojima , Maki Tanaka , Wataru Nagatomo
IPC分类号: H01L21/66 , G03C5/00 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号: G03F7/70641 , G03F7/705 , G03F7/70625 , Y10S430/143
摘要: In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.
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