Abstract:
A method for operating a particle beam microscopy system includes recording a first particle-microscopic image at a given first focus and varying the excitations of the first deflection device within a given first range. The method also includes changing the focus to a second focus, and determining a second range of excitations of the first deflection device on the basis of the first range, the first excitation, the second excitation and a machine parameter determined in advance. The method further includes recording a second particle-microscopic image at the second focus and varying the excitations of the first deflection device within the determined second range. The second range of excitations is determined so that a region of the object represented in the second particle-microscopic image was also represented in the first particle-microscopic image.
Abstract:
Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range.
Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
A ceramic member containing an insulating member is disclosed. The ceramic member comprises a ceramic body and an insulating layer on the ceramic body. The ceramic body contains aluminum oxide crystals and aluminum titanate crystals. The insulating layer contains silicon oxide as a main component. The ceramic body includes a first region that includes a first surface portion covered by the insulating layer, and a second region outside the first region, and having a surface resistivity of 1×106 to 1×109Ω/□. A surface resistivity of the first region is higher than the surface resistivity of the second region.
Abstract:
Techniques for reducing an electrical stress in a acceleration/deceleration system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an acceleration/deceleration system. The acceleration/deceleration system may comprise an acceleration column including a plurality of electrodes having apertures through which a charged particle beam may pass. The acceleration/deceleration system may also comprise a plurality of voltage grading components respectively electrically coupled to the plurality of electrodes. The acceleration/deceleration system may further comprise a plurality of insulated conductors disposed proximate the plurality of voltage grading components to modify an electrical field about the plurality of voltage grading components.
Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
Abstract:
Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
Abstract:
The present invention provides a stable charged particle beam apparatus to enable high-resolution observation by reducing the influence of the noise of a large number of power supplies used in an aberration corrector. The charged particle beam apparatus that has: an SEM column for irradiating an electron beam onto a specimen and making the electron beam scan it; a specimen chamber for housing a specimen stage on which the specimen is placed and held; a detector for detecting secondary electrons generated by the scanning of the electron beam; display means for displaying an output signal of the detector as an SEM image; and a control unit for controlling component parts including the SEM column, the specimen chamber, and the display means. The SEM column has a pair of accelerating electrodes and an aberration corrector that is placed between the pair of accelerating electrodes and corrects aberration of the electron beam, and accelerates the electron beam during a period when being transmitted through the aberration corrector by a high voltage being impressed across the pair of accelerating electrodes.