公开(公告)号：US07683487B2

公开(公告)日：2010-03-23

申请号：US11307006

申请日：2006-01-19

Applicant: Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

Inventor： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

IPC: H01L23/48

CPC classification number: H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

Abstract: A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract translation: 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光隔离层，抗反射涂层和光刻胶层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US20050148166A1

公开(公告)日：2005-07-07

申请号：US10707632

申请日：2003-12-26

Applicant: SHUN-LI LIN ,  YUN CHU LIN ,  WEN CHUNG CHANG ,  CHING YI LEE

Inventor： SHUN-LI LIN ,  YUN CHU LIN ,  WEN CHUNG CHANG ,  CHING YI LEE

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

Abstract: A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract translation: 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光学隔离层，抗反射涂层和光致抗蚀剂层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US07008870B2

公开(公告)日：2006-03-07

申请号：US10707632

申请日：2003-12-26

Applicant: Shun-Li Lin ,  Yun Chu Lin ,  Wen Chung Chang ,  Ching Yi Lee

Inventor： Shun-Li Lin ,  Yun Chu Lin ,  Wen Chung Chang ,  Ching Yi Lee

IPC: H01L21/4763

CPC classification number: H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

Abstract: A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract translation: 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光学隔离层，抗反射涂层和光致抗蚀剂层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US20060199375A1

公开(公告)日：2006-09-07

申请号：US11307006

申请日：2006-01-19

Applicant: Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

Inventor： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

IPC: G03F1/00 ,  H01L21/4763

CPC classification number: H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

Abstract: A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract translation: 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光隔离层，抗反射涂层和光刻胶层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。