公开(公告)号：US20090050468A1

公开(公告)日：2009-02-26

申请号：US11843508

申请日：2007-08-22

申请人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

发明人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

IPC分类号： C23C14/34 ,  C23C14/54

CPC分类号： C23C14/185 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76888

摘要： An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

摘要翻译： 用于集成电路的铝互连金属化在可选择地添加氩气的情况下在纯氧环境中被可控地氧化。 有利的是，当铝溅射时，将晶片从高于300℃的温度冷却到小于100℃，从而允许将镀铝的晶片装入塑料盒中。 氧化可以可控地发生在高真空和低真空转移室之间的通过室中。 氧分压有利地在0.01至1托，优选0.1至0.5托的范围内。 当将晶片放置在水冷基座上时，将氩气添加到大于1托的总压力促进晶片冷却。 为了防止氧回流到溅射室中，冷却室在冷却和第一氩气期间不被真空泵送，然后氧气被脉冲进入室。