公开(公告)号：US20090050468A1

公开(公告)日：2009-02-26

申请号：US11843508

申请日：2007-08-22

申请人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

发明人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

IPC分类号： C23C14/34 ,  C23C14/54

CPC分类号： C23C14/185 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76888

摘要： An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

摘要翻译： 用于集成电路的铝互连金属化在可选择地添加氩气的情况下在纯氧环境中被可控地氧化。 有利的是，当铝溅射时，将晶片从高于300℃的温度冷却到小于100℃，从而允许将镀铝的晶片装入塑料盒中。 氧化可以可控地发生在高真空和低真空转移室之间的通过室中。 氧分压有利地在0.01至1托，优选0.1至0.5托的范围内。 当将晶片放置在水冷基座上时，将氩气添加到大于1托的总压力促进晶片冷却。 为了防止氧回流到溅射室中，冷却室在冷却和第一氩气期间不被真空泵送，然后氧气被脉冲进入室。

公开(公告)号：US08696875B2

公开(公告)日：2014-04-15

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述腔室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US20120318340A1

公开(公告)日：2012-12-20

申请号：US13601441

申请日：2012-08-31

申请人： Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu ,  Zhigang Xie

发明人： Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu ,  Zhigang Xie

IPC分类号： H01L31/0264 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/20 ,  H01L31/0248 ,  H01L31/0376

CPC分类号： H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a back junction solar cell. The solar cell includes a base layer, a quantum-tunneling-barrier (QTB) layer situated below the base layer facing away from incident light, an emitter layer situated below the QTB layer, a front surface field (FSF) layer situated above the base layer, a front-side electrode situated above the FSF layer, and a back-side electrode situated below the emitter layer.

摘要翻译： 本发明的一个实施例提供一种背结太阳能电池。 太阳能电池包括基底层，位于基底层的背离入射光的量子隧道势垒（QTB）层，位于QTB层下面的发射极层，位于基底之上的前表面场（FSF）层 层，位于FSF层上方的前侧电极和位于发射极层下方的背面电极。

公开(公告)号：US20110277816A1

公开(公告)日：2011-11-17

申请号：US13048804

申请日：2011-03-15

申请人： Zheng Xu ,  Jianming Fu ,  Jiunn Benjamin Heng ,  Chentao Yu

发明人： Zheng Xu ,  Jianming Fu ,  Jiunn Benjamin Heng ,  Chentao Yu

IPC分类号： H01L31/052 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/0747 ,  Y02E10/52

摘要： One embodiment of the present invention provides a solar cell with shade-free front electrode. The solar cell includes a photovoltaic body, a front-side ohmic contact layer situated above the photovoltaic body, a back-side ohmic contact layer situated below the photovoltaic body, a front-side electrode situated above the front-side ohmic contact layer, and a back-side electrode situated below the back-side ohmic contact layer. The front-side electrode includes a plurality of parallel metal grid lines, and the surface of at least one metal grid line is curved, thereby allowing incident light hitting the curved surface to be reflected downward and absorbed by the solar cell surface adjacent to the metal grid line.

摘要翻译： 本发明的一个实施例提供一种具有无遮蔽的前电极的太阳能电池。 太阳能电池包括光电体，位于光电体上方的前侧欧姆接触层，位于光伏体下方的背面欧姆接触层，位于前侧欧姆接触层上方的前侧电极，以及 位于背侧欧姆接触层下方的背面电极。 前侧电极包括多个平行的金属网格线，并且至少一个金属网格线的表面是弯曲的，从而允许入射到该曲面的入射光向下反射并被靠近金属的太阳能电池表面吸收 网格线。

公开(公告)号：US20090053888A1

公开(公告)日：2009-02-26

申请号：US12288540

申请日：2008-10-20

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/02183 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.

摘要翻译： 一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。 通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

公开(公告)号：US07294574B2

公开(公告)日：2007-11-13

申请号：US10915139

申请日：2004-08-09

申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

IPC分类号： H01L21/44

CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

公开(公告)号：US20070241458A1

公开(公告)日：2007-10-18

申请号：US11809153

申请日：2007-05-30

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： H01L23/48

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.

摘要翻译： 用于半导体器件应用的金属/金属氮化物阻挡层。 阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

公开(公告)号：US20050056536A1

公开(公告)日：2005-03-17

申请号：US10934231

申请日：2004-09-03

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok Sinha

IPC分类号： C23C14/34 ,  C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

摘要翻译： 在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

公开(公告)号：US06277249B1

公开(公告)日：2001-08-21

申请号：US09518180

申请日：2000-03-02

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

IPC分类号： C23C1435

CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形槽。 位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。 例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场， 密度等离子体从槽的顶部延伸到底部。 大的等离子体体积增加了溅射的金属原子将被电离的可能性。 磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。 顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。 槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

公开(公告)号：US5976334A

公开(公告)日：1999-11-02

申请号：US978433

申请日：1997-11-25

申请人： Jianming Fu ,  Zheng Xu

发明人： Jianming Fu ,  Zheng Xu

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  C23C14/00

CPC分类号： H01J37/3444 ,  C23C14/32 ,  C23C14/3457 ,  C23C14/54 ,  H01J37/3405

摘要： A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.

摘要翻译： 等离子体物理气相沉积（PVD）反应器，其被配置用于不需要溅射工作气体的自持溅射，但溅射离子足以维持靶的溅射。 根据本发明，监测施加到溅射靶的功率，以确定是否保持持续的自溅射。 如果腔室中的电气参数或其他参数指示自持血浆已经塌缩，则开始重新初始化过程，包括：将诸如氩气的工作气体引入腔室; 再次激发等离子体; 然后有效地消除工作气体。