公开(公告)号：US08569794B2

公开(公告)日：2013-10-29

申请号：US12921695

申请日：2009-03-06

申请人： Hisayuki Miki ,  Yasunori Yokoyama

发明人： Hisayuki Miki ,  Yasunori Yokoyama

IPC分类号： H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02631 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.

摘要翻译： 本发明的III族氮化物半导体器件通过在基板（11）上至少层叠由III族氮化物化合物构成的缓冲层（12）而获得，其中缓冲层（12）由AlN制成， 缓冲层（12）的a轴的晶格常数小于散装状态下的AlN的a轴的晶格常数。

公开(公告)号：US08148712B2

公开(公告)日：2012-04-03

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/06

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

公开(公告)号：US08012784B2

公开(公告)日：2011-09-06

申请号：US12464522

申请日：2009-05-12

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L21/00

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014

摘要： Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0≦X

摘要翻译： 本发明提供能够制造发光性优异且生产率优异的III族氮化物半导体发光元件的III族氮化物半导体发光元件的制造方法。 III族氮化物半导体发光器件; 和一盏灯。 提供了一种方法，其中将由III族氮化物化合物构成的缓冲层12层压在基板11上，然后层叠设置有下层14a，发光层15和p型的n型半导体层14 半导体层16依次层叠在缓冲层12上，并且是通过用等离子体激活而形成缓冲层12以具有AlXGa1-XN（0＆amp; NlE; X <1）的组成的方法，从而使 至少金属Ga源和含有V族元素的气体，并且在缓冲层12上形成下层14。

公开(公告)号：US20110163350A1

公开(公告)日：2011-07-07

申请号：US12922135

申请日：2009-03-09

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/44 ,  C23C14/34 ,  C23C14/14

CPC分类号： C23C14/0617 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.

公开(公告)号：US07935980B2

公开(公告)日：2011-05-03

申请号：US12296806

申请日：2007-04-13

申请人： Kenzo Hanawa ,  Yasunori Yokoyama

发明人： Kenzo Hanawa ,  Yasunori Yokoyama

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device 1 in which an n-type semiconductor layer (13), a light-emitting layer (14), and a p-type semiconductor layer (15) are formed on a substrate (11), a transparent positive electrode (16) is formed on the p-type semiconductor layer (15), a positive electrode bonding pad (17) is formed on the transparent positive electrode (16), and a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13).

摘要翻译： 一种具有高发光特性并防止电极在引线接合期间被剥离的半导体发光器件。 还公开了一种半导体发光器件1的制造方法，其中n型半导体层（13），发光层（14）和p型半导体层（15）形成在衬底上 （11）中，在p型半导体层（15）上形成透明正极（16），在透明正极（16）上形成正极焊盘（17），将负极接合焊盘 18）形成在n型半导体层（13）上。

公开(公告)号：US20100213476A1

公开(公告)日：2010-08-26

申请号：US12377273

申请日：2007-09-26

申请人： Yasunori Yokoyama ,  Hiromitsu Sakai ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hiromitsu Sakai ,  Hisayuki Miki

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2924/0002 ,  H01S5/0213 ,  H01S5/34333 ,  H01S2301/173 ,  H01L2924/00

摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. The method of manufacturing a group-III nitride compound semiconductor light-emitting device includes: a pre-process of performing plasma processing on a substrate (11); a sputtering process of forming an intermediate layer (12) made of at least a group-III nitride compound on the substrate (11) using a sputtering method after the pre-process; and a process of sequentially forming an n-type semiconductor layer (14) including an underlying layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) on the intermediate layer (12).

摘要翻译： 本发明提供了具有高生产率和良好发射特性的III族氮化物化合物半导体发光器件，制造III族氮化物半导体发光器件和灯的方法。 III族氮化物化合物半导体发光器件的制造方法包括：对衬底（11）进行等离子体处理的预处理; 在预处理之后使用溅射法在所述基板（11）上形成由至少III族氮化物化合物制成的中间层（12）的溅射工艺; 以及在中间层（12）上依次形成包括下层（14a），发光层（15）和p型半导体层（16）的n型半导体层（14）的工序。

公开(公告)号：US20090283795A1

公开(公告)日：2009-11-19

申请号：US12464522

申请日：2009-05-12

申请人： Hisayuki MIKI ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki MIKI ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014

摘要： Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0≦X

摘要翻译： 本发明提供能够制造发光性优异且生产率优异的III族氮化物半导体发光元件的III族氮化物半导体发光元件的制造方法。 III族氮化物半导体发光器件; 和一盏灯。 提供了一种方法，其中将由III族氮化物化合物构成的缓冲层12层压在基板11上，然后层叠设置有下层14a，发光层15和p型的n型半导体层14 半导体层16依次层叠在缓冲层12上，并且是通过用等离子体激活而形成缓冲层12以具有AlXGa1-XN（0 <= X <1）的组成的方法，从而 至少使金属Ga源和含有V族元素的气体反应，并且在缓冲层12上形成下层14。

公开(公告)号：US20090194784A1

公开(公告)日：2009-08-06

申请号：US12306609

申请日：2008-01-15

申请人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

发明人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L29/205 ,  H01L29/20 ,  H01L21/20

CPC分类号： C23C16/34 ,  B82Y20/00 ,  C23C14/0617 ,  C23C14/0641 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

摘要翻译： 本发明的III族氮化物化合物半导体器件包括衬底，设置在衬底上的中间层和设置在中间层上的基底层，其中在（0002）平面的摇摆曲线中半高的全宽度 （10-10）平面的摆动曲线为100弧度以下，半高的全宽为300弧度以下。 此外，本发明的III族氮化物化合物半导体器件的制造方法包括使用溅射法形成中间层。

公开(公告)号：US20090050468A1

公开(公告)日：2009-02-26

申请号：US11843508

申请日：2007-08-22

申请人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

发明人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

IPC分类号： C23C14/34 ,  C23C14/54

CPC分类号： C23C14/185 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76888

摘要： An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

摘要翻译： 用于集成电路的铝互连金属化在可选择地添加氩气的情况下在纯氧环境中被可控地氧化。 有利的是，当铝溅射时，将晶片从高于300℃的温度冷却到小于100℃，从而允许将镀铝的晶片装入塑料盒中。 氧化可以可控地发生在高真空和低真空转移室之间的通过室中。 氧分压有利地在0.01至1托，优选0.1至0.5托的范围内。 当将晶片放置在水冷基座上时，将氩气添加到大于1托的总压力促进晶片冷却。 为了防止氧回流到溅射室中，冷却室在冷却和第一氩气期间不被真空泵送，然后氧气被脉冲进入室。

公开(公告)号：US09040319B2

公开(公告)日：2015-05-26

申请号：US13326542

申请日：2011-12-15

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/02 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/30 ,  H01S5/343

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。