Process for the production of an oxidation catalyst on-line
    1.
    发明授权
    Process for the production of an oxidation catalyst on-line 失效
    在线生产氧化催化剂的方法

    公开(公告)号:US06365543B1

    公开(公告)日:2002-04-02

    申请号:US09388218

    申请日:1999-09-01

    IPC分类号: B01J2300

    摘要: A process and catalyst for the partial oxidation of paraffinic hydrocarbons, such as ethane, propane, naphtha, and natural gas condensates, to olefins, such as ethylene and propylene. The process involves contacting a paraffinic hydrocarbon with oxygen in the presence of a catalyst under autothermal process conditions. The catalyst comprises a Group 8B metal and, optionally, a promoter metal, such as tin or copper, supported on a fiber monolith support, preferably a ceramic fiber mat monolith. In another aspect, the invention is a process of oxidizing a paraffinic hydrocarbon to an olefin under autothermal conditions in the presence of a catalyst comprising a Group 8B metal and, optionally, a promoter metal, the metals being loaded onto the front face of a monolith support. An on-line method of synthesizing and regenerating catalysts for autothermal oxidation processes is also disclosed.

    摘要翻译: 用于将链烷烃(例如乙烷,丙烷,石脑油和天然气)部分氧化的方法和催化剂冷凝成烯烃,例如乙烯和丙烯。 该方法包括在自热过程条件下在催化剂存在下使链烷烃与氧接触。 该催化剂包含8B族金属和任选的负载在纤维整料载体上,优选陶瓷纤维垫料整料的助催化剂金属,例如锡或铜。 在另一方面,本发明是在含有第8B族金属和任选的助催化剂金属的催化剂存在下,在自热条件下将链烷烃烃氧化成烯烃的方法,将金属加载到整料的正面上 支持。 还公开了用于自热氧化方法的催化剂的合成和再生的在线方法。

    CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT
    6.
    发明申请
    CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT 审中-公开
    铝互连的控制表面氧化

    公开(公告)号:US20090050468A1

    公开(公告)日:2009-02-26

    申请号:US11843508

    申请日:2007-08-22

    IPC分类号: C23C14/34 C23C14/54

    摘要: An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

    摘要翻译: 用于集成电路的铝互连金属化在可选择地添加氩气的情况下在纯氧环境中被可控地氧化。 有利的是,当铝溅射时,将晶片从高于300℃的温度冷却到小于100℃,从而允许将镀铝的晶片装入塑料盒中。 氧化可以可控地发生在高真空和低真空转移室之间的通过室中。 氧分压有利地在0.01至1托,优选0.1至0.5托的范围内。 当将晶片放置在水冷基座上时,将氩气添加到大于1托的总压力促进晶片冷却。 为了防止氧回流到溅射室中,冷却室在冷却和第一氩气期间不被真空泵送,然后氧气被脉冲进入室。