公开(公告)号：US11056408B2

公开(公告)日：2021-07-06

申请号：US16528791

申请日：2019-08-01

Applicant: ABB Power Grids Switzerland AG

Inventor： Chunlei Liu ,  Franc Dugal ,  Munaf Rahimo ,  Peter Karl Steimer

IPC: H01L23/051 ,  H01L23/62 ,  H01L23/492 ,  H01L25/07 ,  H02H3/02 ,  H01L25/18

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.