公开(公告)号：US11056408B2

公开(公告)日：2021-07-06

申请号：US16528791

申请日：2019-08-01

Applicant: ABB Power Grids Switzerland AG

Inventor： Chunlei Liu ,  Franc Dugal ,  Munaf Rahimo ,  Peter Karl Steimer

IPC: H01L23/051 ,  H01L23/62 ,  H01L23/492 ,  H01L25/07 ,  H02H3/02 ,  H01L25/18

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

公开(公告)号：US11043943B2

公开(公告)日：2021-06-22

申请号：US16411716

申请日：2019-05-14

Applicant: ABB Power Grids Switzerland AG

Inventor： Umamaheswara Vemulapati ,  Ulrich Schlapbach ,  Munaf Rahimo

IPC: H03K5/08 ,  H03K17/08 ,  H03K3/02 ,  H03K17/16 ,  H03K17/687 ,  H03K17/567 ,  H03K17/12 ,  H03K17/74

Abstract: A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET into a blocking state.

公开(公告)号：US11189688B2

公开(公告)日：2021-11-30

申请号：US17285415

申请日：2019-09-13

Applicant: ABB Power Grids Switzerland AG

Inventor： Luca De-Michielis ,  Munaf Rahimo ,  Chiara Corvasce

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66 ,  H01L29/739

Abstract: An insulated gate power semiconductor device (1a), comprises in an order from a first main side (20) towards a second main side (27) opposite to the first main side (20) a first conductivity type source layer (3), a second conductivity type base layer (4), a first conductivity type enhancement layer (6) and a first conductivity type drift layer (5). The insulated gate power semiconductor device (1a) further comprises two neighbouring trench gate electrodes (7) to form a vertical MOS cell sandwiched between the two neighbouring trench gate electrodes (7). At least a portion of a second conductivity type protection layer (8a) is arranged in an area between the two neighbouring trench gate electrodes (7), wherein the protection layer (8a) is separated from the gate insulating layer (72) by a first conductivity type channel layer (60a; 60b) extending along the gate insulating layer (72).

公开(公告)号：US20210320170A1

公开(公告)日：2021-10-14

申请号：US17285415

申请日：2019-09-13

Applicant: ABB Power Grids Switzerland AG

Inventor： Luca De-Michielis ,  Munaf Rahimo ,  Chiara Corvasce

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L21/265

Abstract: An insulated gate power semiconductor device (1a), comprises in an order from a first main side (20) towards a second main side (27) opposite to the first main side (20) a first conductivity type source layer (3), a second conductivity type base layer (4), a first conductivity type enhancement layer (6) and a first conductivity type drift layer (5). The insulated gate power semiconductor device (1a) further comprises two neighbouring trench gate electrodes (7) to form a vertical MOS cell sandwiched between the two neighbouring trench gate electrodes (7). At least a portion of a second conductivity type protection layer (8a) is arranged in an area between the two neighbouring trench gate electrodes (7), wherein the protection layer (8a) is separated from the gate insulating layer (72) by a first conductivity type channel layer (60a; 60b) extending along the gate insulating layer (72).

公开(公告)号：US11056582B2

公开(公告)日：2021-07-06

申请号：US16969773

申请日：2019-02-13

Applicant: ABB Power Grids Switzerland AG

Inventor： Jan Vobecky ,  Umamaheswara Vemulapati ,  Munaf Rahimo

IPC: H01L29/747 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423

Abstract: A bidirectional thyristor device includes a semiconductor wafer with a number of layers forming pn junctions. A first main electrode and a first gate electrode are arranged on a first main side of the wafer. A second main electrode and a second gate electrode are arranged on a second main side of the wafer. First emitter shorts penetrate through a first semiconductor layer and second emitter shorts penetrate through a fifth semiconductor layer. In an orthogonal projection onto a plane parallel to the first main side, a first area occupied by the first semiconductor layer and the first emitter shorts overlaps in an overlapping area with a second area occupied by the fifth semiconductor layer and the second emitter shorts. The overlapping area, in which the first area overlaps with the second area, encompasses at least 50% of a total wafer area occupied by the semiconductor wafer.