公开(公告)号：US20240118333A1

公开(公告)日：2024-04-11

申请号：US18465207

申请日：2023-09-12

Applicant: ABB Schweiz AG

Inventor： Aleksi Vulli ,  Gerd Schlottig ,  Enea Bianda ,  Michal Orkisz ,  Marcin Firla

IPC: G01R31/26 ,  G01R31/27

CPC classification number: G01R31/2619 ,  G01R31/27

Abstract: An apparatus for performing the following. The apparatus maintains, in a memory, information on a computational model for thermal behavior of layers of an insulated-gate bipolar transistor, IGBT, module. The apparatus obtains measurements of the dissipated power at the semiconductors and the ambient temperature and determines one or more current values of one or more temperatures of the IGBT module based on a switching delay of the IGBT module. The apparatus calculates a current estimate of a joint state-parameter space of the computational model using a Bayesian filter and the computational model taking as inputs the dissipated power and the ambient temperature. The joint state-parameter space includes the one or more temperatures, one or more thermal loss parameters and one or more wear parameters. The one or more current values of the one or more temperatures are used as observations in the Bayesian filter.