公开(公告)号：US10554201B2

公开(公告)日：2020-02-04

申请号：US15495091

申请日：2017-04-24

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Matthias Bator ,  Ricardo Bini ,  Munaf Rahimo

IPC: H03K17/082 ,  H03K5/15 ,  H03K17/13 ,  H03K17/687 ,  H03K17/567 ,  H03K5/00 ,  H03K17/10 ,  H03K17/12 ,  H02H3/05

Abstract: A solid state switch for connecting and disconnecting an electrical device has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. A gate driver is operative to send gate drive signals to the at least one FET-type device and to the at least one thyristor-type device for providing current to the electrical device. The gate driver is constructed to control a split of the current as between the at least one FET-type device and the at least one thyristor-type device.

公开(公告)号：US20180026623A1

公开(公告)日：2018-01-25

申请号：US15495091

申请日：2017-04-24

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Mathias Bator ,  Ricardo Bini ,  Munaf Rahimo

IPC: H03K17/082 ,  H03K17/13 ,  H01P1/36 ,  H02H1/00 ,  H02H9/04 ,  H03K5/15

Abstract: A solid state switch for connecting and disconnecting an electrical device has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. A gate driver is operative to send gate drive signals to the at least one FET-type device and to the at least one thyristor-type device for providing current to the electrical device. The gate driver is constructed to control a split of the current as between the at least one FET-type device and the at least one thyristor-type device.