Driver circuit
    1.
    发明授权

    公开(公告)号:US10084439B2

    公开(公告)日:2018-09-25

    申请号:US15375964

    申请日:2016-12-12

    Abstract: A gate driver circuit and a method of operating a gate driver circuit. The gate driver circuit comprising a high auxiliary voltage rail and a low auxiliary voltage rail for receiving high auxiliary voltage and low auxiliary voltage, output stage connected to the auxiliary voltage rails and comprising a control input and an output terminal for providing an output voltage of the gate driver, plurality of series connections of controllable switches and resistive components, wherein a first part of the plurality of series connections is connected between the high auxiliary voltage rail and control input of the output stage, and a second part of the plurality of series connections is connected between the low auxiliary voltage rail and control input of the output stage, and a control circuit for controlling the controllable switches for providing a control voltage and a control current to the control input of the output stage.

    DRIVER CIRCUIT
    2.
    发明申请
    DRIVER CIRCUIT 审中-公开

    公开(公告)号:US20170170817A1

    公开(公告)日:2017-06-15

    申请号:US15375964

    申请日:2016-12-12

    Abstract: A gate driver circuit and a method of operating a gate driver circuit. The gate driver circuit comprising a high auxiliary voltage rail and a low auxiliary voltage rail for receiving high auxiliary voltage and low auxiliary voltage, output stage connected to the auxiliary voltage rails and comprising a control input and an output terminal for providing an output voltage of the gate driver, plurality of series connections of controllable switches and resistive components, wherein a first part of the plurality of series connections is connected between the high auxiliary voltage rail and control input of the output stage, and a second part of the plurality of series connections is connected between the low auxiliary voltage rail and control input of the output stage, and a control circuit for controlling the controllable switches for providing a control voltage and a control current to the control input of the output stage.

    LIMITING OF TEMPERATURE VARIATIONS OF SEMICONDUCTOR COMPONENT
    3.
    发明申请
    LIMITING OF TEMPERATURE VARIATIONS OF SEMICONDUCTOR COMPONENT 有权
    限制半导体元件的温度变化

    公开(公告)号:US20160118975A1

    公开(公告)日:2016-04-28

    申请号:US14879169

    申请日:2015-10-09

    CPC classification number: H03K17/14 H02M1/32 H02M2001/327

    Abstract: A method and an arrangement of limiting temperature variations in a semiconductor component of a switching converter, the method comprising determining a quantity relating to operation temperature of the switching converter, determining temperature of the semiconductor component, selecting a maximum value of switching frequency of the switching converter based on the determined quantity relating to operation temperature of the switching converter and the temperature of the semiconductor component, and limiting the switching frequency of the semiconductor component of the switching converter to the selected switching frequency.

    Abstract translation: 一种限制开关转换器的半导体元件中的温度变化的方法和装置,该方法包括确定与开关转换器的工作温度相关的量,确定半导体元件的温度,选择开关的开关频率的最大值 转换器基于与切换转换器的操作温度和半导体部件的温度相关的确定量,并将开关转换器的半导体部件的开关频率限制到所选择的开关频率。

    Limiting of temperature variations of semiconductor component

    公开(公告)号:US09712150B2

    公开(公告)日:2017-07-18

    申请号:US14879169

    申请日:2015-10-09

    CPC classification number: H03K17/14 H02M1/32 H02M2001/327

    Abstract: A method and an arrangement of limiting temperature variations in a semiconductor component of a switching converter, the method comprising determining a quantity relating to operation temperature of the switching converter, determining temperature of the semiconductor component, selecting a maximum value of switching frequency of the switching converter based on the determined quantity relating to operation temperature of the switching converter and the temperature of the semiconductor component, and limiting the switching frequency of the semiconductor component of the switching converter to the selected switching frequency.

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