公开(公告)号：US11663978B1

公开(公告)日：2023-05-30

申请号：US17823945

申请日：2022-08-31

Applicant: ADRC. CO. KR

Inventor： Jin Jang ,  Jun Hyuk Cheon ,  Junyeong Kim ,  Suhui Lee ,  Yuanfeng Chen ,  Mohammad Masum Billah

IPC: G09G3/3266

CPC classification number: G09G3/3266 ,  G09G2330/021

Abstract: The present invention relates to a driving circuit including stages for supplying signals. The respective stages may include: a first LTPO transistor including a first transistor that is a low-temperature polycrystalline silicon thin film transistor (LTPS TFT) and a second transistor that is an oxide TFT; and a second LTPO transistor including a third transistor that is an LTPS TFT and a fourth transistor that is an oxide TFT. A first end of the first LTPO transistor may be connected to a gate of the second LTPO transistor, and voltages of signals corresponding to the respective stages from among the signals may be a voltage at a first end of the second LTPO transistor.

公开(公告)号：US20240274678A1

公开(公告)日：2024-08-15

申请号：US18387927

申请日：2023-11-08

Applicant: ADRC. CO. KR

Inventor： Seongbok Kang ,  Jin Jang

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/42384 ,  H01L29/6675 ,  H01L29/78672

Abstract: A manufacturing method for a thin film transistor according to an exemplary embodiment includes a step of forming a buffer layer on a substrate, a step of forming a hydrogenated amorphous silicon layer on the buffer layer, a step of performing blue laser annealing on the hydrogenated amorphous silicon layer, and a step of forming a semiconductor layer by doping parts of the hydrogenated amorphous silicon layer with impurities, and in the step of performing blue laser annealing, dehydrogenation and crystallization are performed in the hydrogenated amorphous silicon layer.

公开(公告)号：US20240250197A1

公开(公告)日：2024-07-25

申请号：US18203641

申请日：2023-05-30

Applicant: ADRC, CO, KR

Inventor： Seongbok KANG ,  Jin Jang

IPC: H01L31/105 ,  H01L31/0224 ,  H01L31/20

CPC classification number: H01L31/1055 ,  H01L31/022408 ,  H01L31/202 ,  H01L31/208

Abstract: A photodiode according to an embodiment includes: a semiconductor layer including a first area, a second area, and a third area; a first electrode electrically connected to the first area; and a second electrode electrically connected to the third area, wherein the first area includes a p-type semiconductor area, the third area includes an n-type semiconductor area, and the thickness of the semiconductor layer is 50 nanometers to 800 nanometers.

公开(公告)号：US11786929B2

公开(公告)日：2023-10-17

申请号：US17691256

申请日：2022-03-10

Applicant: ADRC. CO. KR

Inventor： Jin Jang

IPC: B05C13/02 ,  B05C5/02 ,  B05C9/14 ,  B05B16/20

CPC classification number: B05C13/02 ,  B05B16/20 ,  B05C5/0208 ,  B05C9/14

Abstract: The present disclosure provides a spray coater including a spray nozzle unit having at least one spray nozzle and configured to spray a coating material, a spray nozzle transfer unit configured to control a position of the spray nozzle unit by operating a transfer block, on which the spray nozzle unit is mounted, at least in a planar direction, a substrate seating unit positioned below the spray nozzle unit and configured such that a substrate, which is subjected to coating, is seated thereon, a substrate carrier configured to accommodate the substrate before the substrate is coated and accommodate the substrate after the substrate is coated, and a robot arm configured to unload the substrate from the substrate carrier and provide the substrate to the substrate seating unit before the substrate is coated or unload the substrate from the substrate seating unit and load the substrate on the substrate carrier after the substrate is coated.

公开(公告)号：US12293707B2

公开(公告)日：2025-05-06

申请号：US18667143

申请日：2024-05-17

Applicant: ADRC. CO. KR

Inventor： Jin Jang ,  Jun Hyuk Cheon ,  Junyeong Kim

IPC: G09G3/32

Abstract: A pixel circuit may include a first transistor that provides a data signal to a first node according to a scan signal, a second transistor that initializes the first node, a first capacitor that is coupled between one terminal to which a light emission signal is provided and the first node, a second capacitor that is coupled between the first node and a second node, a third transistor that includes a gate coupled to the second node and one terminal coupled to a third node, a fourth transistor that includes a gate coupled to the second node and one terminal coupled to the third node, a fifth transistor that is coupled between the second node and the third node, a drive transistor that includes a gate to which a voltage corresponding to the voltage at the third node is supplied, and a micro light emitting diode that is coupled to the drive transistor.

公开(公告)号：US12183829B2

公开(公告)日：2024-12-31

申请号：US17558874

申请日：2021-12-22

Applicant: ADRC. CO. KR

Inventor： Jin Jang ,  Suhui Lee

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.