公开(公告)号：US20240222161A1

公开(公告)日：2024-07-04

申请号：US18387117

申请日：2023-11-06

Applicant: ADRC. CO. KR

Inventor： Jun Hyuk CHEON ,  Seongbok Kang ,  Jin-han Park

IPC: H01L21/67 ,  H01L21/268 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/40

CPC classification number: H01L21/67115 ,  H01L21/268 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/4025

Abstract: The present disclosure relates to blue laser annealing equipment and an annealing manufacturing process using the same. The blue laser annealing equipment includes at least one blue laser diode controller including at least one output fiber; at least one light path module connected to an output fiber of the blue laser diode controller to process light emitted from the output fiber and direct the light to a substrate and perform a dehydrogenation process or a crystallization process on a silicon layer applied to the substrate; and a stage capable of relative motion with respect to the light path module and loading the substrate so that the dehydrogenation process and the crystallization process are performed on a surface of the substrate with respect to the light path module.

公开(公告)号：US20240274678A1

公开(公告)日：2024-08-15

申请号：US18387927

申请日：2023-11-08

Applicant: ADRC. CO. KR

Inventor： Seongbok Kang ,  Jin Jang

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/42384 ,  H01L29/6675 ,  H01L29/78672

Abstract: A manufacturing method for a thin film transistor according to an exemplary embodiment includes a step of forming a buffer layer on a substrate, a step of forming a hydrogenated amorphous silicon layer on the buffer layer, a step of performing blue laser annealing on the hydrogenated amorphous silicon layer, and a step of forming a semiconductor layer by doping parts of the hydrogenated amorphous silicon layer with impurities, and in the step of performing blue laser annealing, dehydrogenation and crystallization are performed in the hydrogenated amorphous silicon layer.