公开(公告)号：US20240071985A1

公开(公告)日：2024-02-29

申请号：US17896746

申请日：2022-08-26

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： RAHUL AGARWAL ,  CHANDRA SEKHAR MANDALAPU ,  RAJA SWAMINATHAN

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2924/381

Abstract: A method for forming a semiconductor assembly that includes forming a first set of layers on a first wafer, where one or more layers of the first set includes one or more devices of the semiconductor assembly. The method further includes forming a second set of layers on a second wafer, where one or more layers of the second set include connections between one or more of the devices of the semiconductor assembly. The method additionally includes coupling a layer of the first set to a layer of the second set using metal to metal hybrid bonding.