公开(公告)号：US20230095805A1

公开(公告)日：2023-03-30

申请号：US17487569

申请日：2021-09-28

申请人： ADVANCED MICRO DEVICES, INC.

发明人： Rajesh Mangalore Anand ,  Prasant Kumar Vallur ,  Piyush Gupta ,  Girish Anathahalli Singrigowda ,  Jagadeesh Anathahalli Singrigowda

IPC分类号： H03K19/17788 ,  H03K19/003 ,  H03K19/0185

摘要： Systems and techniques for applying voltage biases to gates of driver circuitry of an integrated circuit (IC) based on a detected bus voltage, IC supply voltage, or both are used to mitigate Electrical Over-Stress (EOS) issues in components of the driver circuitry caused, for instance, by high bus voltages in serial communication systems relative to maximum operating voltages of those components. A driver bias generator selectively applies bias voltages at gates of transistors of a stacked driver structure of an IC to prevent the voltage drop across any given transistor of the stacked driver structure from exceeding a predetermined threshold associated with the maximum operating voltage range of the transistors.

公开(公告)号：US11764789B2

公开(公告)日：2023-09-19

申请号：US17487569

申请日：2021-09-28

申请人： ADVANCED MICRO DEVICES, INC.

发明人： Rajesh Mangalore Anand ,  Prasant Kumar Vallur ,  Piyush Gupta ,  Girish Anathahalli Singrigowda ,  Jagadeesh Anathahalli Singrigowda

IPC分类号： H03K19/17788 ,  H03K19/0185 ,  H03K19/003

CPC分类号： H03K19/17788 ,  H03K19/00315 ,  H03K19/00384 ,  H03K19/018507

摘要： Systems and techniques for applying voltage biases to gates of driver circuitry of an integrated circuit (IC) based on a detected bus voltage, IC supply voltage, or both are used to mitigate Electrical Over-Stress (EOS) issues in components of the driver circuitry caused, for instance, by high bus voltages in serial communication systems relative to maximum operating voltages of those components. A driver bias generator selectively applies bias voltages at gates of transistors of a stacked driver structure of an IC to prevent the voltage drop across any given transistor of the stacked driver structure from exceeding a predetermined threshold associated with the maximum operating voltage range of the transistors.