公开(公告)号：US09082934B2

公开(公告)日：2015-07-14

申请号：US14037386

申请日：2013-09-26

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Peng-Yi Wu ,  Wen-Yu Lin ,  Chih-Pang Ma ,  Tzu-Chien Hong ,  Chia-Hui Shen

IPC分类号： H01L33/10 ,  H01L33/22 ,  H01L33/36 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/36 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

摘要翻译： 具有提高光提取效率的半导体光电子结构包括基片; 在基板上形成缓冲层，并具有与基板相邻形成有多个槽的图案， 在缓冲层上形成半导体层，在缓冲层上形成n型导体层，在n型导电层上形成有源层，在活性层上形成p型导电层。 在半导体层上形成透明导电层; 在透明导电层上形成p型电极; 在n型导电层上形成n型电极。