公开(公告)号：US10164142B2

公开(公告)日：2018-12-25

申请号：US15634997

申请日：2017-06-27

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. ,  INNOLUX CORPORATION

发明人： Po-Min Tu ,  Chien-Shiang Huang ,  Chien-Chung Peng ,  Tzu-Chien Hung ,  Shih-Cheng Huang ,  Chang-Ho Chen ,  Tsau-Hua Hsieh ,  Jong-Jan Lee ,  Paul-John Schuele

IPC分类号： H01L33/00 ,  H01L33/44 ,  H01L33/24 ,  H01L33/12

摘要： A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.