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28 条记录 (耗时 0.021 秒)

    LED die
    5.
    发明授权
    LED die 有权

    公开(公告)号：US09653648B2

    公开(公告)日：2017-05-16

    申请号：US14820268

    申请日：2015-08-06

    申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    发明人： Chia-Hung Huang ,  Ching-Hsueh Chiu ,  Shun-Kuei Yang ,  Po-Min Tu ,  Shih-Cheng Huang

    IPC分类号： H01L33/20 ,  H01L33/42 ,  H01L33/00 ,  H01L33/38

    CPC分类号： H01L33/20 ,  H01L33/005 ,  H01L33/382 ,  H01L2933/0016

    摘要： An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.

    Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate
    6.
    发明授权
    Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate 有权
    外延衬底，外延衬底的制造方法和具有外延衬底的发光二极管

    公开(公告)号：US09472721B2

    公开(公告)日：2016-10-18

    申请号：US14836147

    申请日：2015-08-26

    申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    发明人： Ching-Hsueh Chiu ,  Ya-Wen Lin ,  Po-Min Tu ,  Shih-Cheng Huang

    IPC分类号： H01L33/22 ,  H01L21/02 ,  C30B29/00 ,  H01L33/12 ,  H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/00 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

    摘要： An epitaxial substrate for growing a lighting emitting structure of a light emitting diode, includes a transparent base, a first buffer layer and a second buffer layer formed on the transparent base. The transparent base includes a first surface and a second surface opposite to the first surface. Plural protrusions are formed on the first surface of the transparent base. Each first buffer layer is formed on the outer surfaces of the plural protrusions. The second buffer layer fills in the recesses defined between two adjacent protrusions, and covers the first buffer layer. The refractive index of the first buffer layer is larger than that of the transparent base, and is less than that of the second buffer layer. This disclosure also relates a method for manufacturing the epitaxial substrate and a light emitting diode having the same.

    摘要翻译： 用于生长发光二极管的发光结构的外延衬底包括形成在透明基底上的透明基底，第一缓冲层和第二缓冲层。 透明基底包括与第一表面相对的第一表面和第二表面。 多个突起形成在透明基底的第一表面上。 每个第一缓冲层形成在多个突起的外表面上。 第二缓冲层填充限定在两个相邻突起之间的凹部，并且覆盖第一缓冲层。 第一缓冲层的折射率大于透明基底的折射率，小于第二缓冲层的折射率。 本公开还涉及用于制造外延衬底的方法和具有该外延衬底的发光二极管。

    LED die and method of manufacturing the same
    7.
    发明授权
    LED die and method of manufacturing the same 有权
    LED模具及其制造方法

    公开(公告)号：US09287451B2

    公开(公告)日：2016-03-15

    申请号：US14466033

    申请日：2014-08-22

    申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    发明人： Ching-Hsueh Chiu ,  Ya-Wen Lin ,  Po-Min Tu ,  Shih-Cheng Huang

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L33/22 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32

    摘要： An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

    摘要翻译： LED管芯包括衬底，第一缓冲层，第二缓冲层，多个纳米球，第一半导体层，有源层和第二半导体层。 第一缓冲层，第二缓冲层，第一半导体层，有源层和第二半导体层依次形成在基板上。 基板在其表面上具有多个突起。 纳米球位于突起上并被第二缓冲层覆盖并位于第二缓冲层中。 本公开还提供了一种制造LED管芯的方法。

    Semiconductor optoelectronic structure with increased light extraction efficiency
    9.
    发明授权
    Semiconductor optoelectronic structure with increased light extraction efficiency 有权
    半导体光电结构提高光提取效率

    公开(公告)号：US09082934B2

    公开(公告)日：2015-07-14

    申请号：US14037386

    申请日：2013-09-26

    申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Peng-Yi Wu ,  Wen-Yu Lin ,  Chih-Pang Ma ,  Tzu-Chien Hong ,  Chia-Hui Shen

    IPC分类号： H01L33/10 ,  H01L33/22 ,  H01L33/36 ,  H01L33/20 ,  H01L33/00

    CPC分类号： H01L33/36 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

    摘要： A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

    摘要翻译： 具有提高光提取效率的半导体光电子结构包括基片; 在基板上形成缓冲层，并具有与基板相邻形成有多个槽的图案， 在缓冲层上形成半导体层，在缓冲层上形成n型导体层，在n型导电层上形成有源层，在活性层上形成p型导电层。 在半导体层上形成透明导电层; 在透明导电层上形成p型电极; 在n型导电层上形成n型电极。