公开(公告)号：US20240290741A1

公开(公告)日：2024-08-29

申请号：US18481203

申请日：2023-10-04

Applicant: ADVANTEST CORPORATION ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Shinji SUGATANI ,  Masaki TAKAKUWA ,  Shuji UEHARA ,  Takayuki OHBA

IPC: H01L23/00 ,  H01L21/683

CPC classification number: H01L24/32 ,  H01L21/6835 ,  H01L24/27 ,  H01L24/30 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68363 ,  H01L2224/2732 ,  H01L2224/3003 ,  H01L2224/32225 ,  H01L2224/8384 ,  H01L2224/97 ,  H01L2924/15151

Abstract: A manufacturing method of a semiconductor apparatus in which a semiconductor chip is joined to a target object, the manufacturing method including forming, in a joining region between the semiconductor chip and the target object where the semiconductor chip and the target object should be joined to each other, a plurality of metal paste patterns with a gap being provided in at least a part along a thickness direction between one another, and joining the semiconductor chip and the target object by sintering the plurality of metal paste patterns sandwiched between the semiconductor chip and the target object in a state where the gap exists between one another.