公开(公告)号：US20210397077A1

公开(公告)日：2021-12-23

申请号：US17463724

申请日：2021-09-01

Applicant: AGC INC.

Inventor： Hiroshi HANEKAWA ,  Tsuyoshi KAKUTA ,  Yoichi SERA ,  Sadatatsu IKEDA

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/52

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

公开(公告)号：US20200055771A1

公开(公告)日：2020-02-20

申请号：US16663534

申请日：2019-10-25

Applicant: AGC Inc.

Inventor： Yosuke TAKEDA ,  Toru IKEDA ,  Naofumi AOYAMA ,  Tatsuya MIYAJIMA ,  Yoichi SERA

IPC: C03C17/25 ,  C03C17/34

Abstract: The present invention relates to a film-attached glass substrate, characterized by: being provided with a glass substrate having two primary surfaces each having a compressive stress layer, and a film containing 1 at % or more of K disposed on one of the primary surfaces of the glass substrate; and the ratio of the difference in the amount of K in the compressive stress layer between the primary surfaces, the ratio being represented by formula (1), being −0.027 to 0.027. Formula (1): Ratio of difference in amount of K of compressive stress layer between primary surfaces=(amount of K in first primary surface−amount of K in second primary surface)/[(amount of K in first primary surface+amount of K in second primary surface)/2]

公开(公告)号：US20190049836A1

公开(公告)日：2019-02-14

申请号：US16056786

申请日：2018-08-07

Applicant: AGC INC.

Inventor： Hiroshi HANEKAWA ,  Tsuyoshi KAKUTA ,  Yoichi SERA ,  Sadatatsu IKEDA

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/48

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.