公开(公告)号：US20250004360A1

公开(公告)日：2025-01-02

申请号：US18884196

申请日：2024-09-13

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US20240241433A1

公开(公告)日：2024-07-18

申请号：US18621502

申请日：2024-03-29

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US20210397077A1

公开(公告)日：2021-12-23

申请号：US17463724

申请日：2021-09-01

Applicant: AGC INC.

Inventor： Hiroshi HANEKAWA ,  Tsuyoshi KAKUTA ,  Yoichi SERA ,  Sadatatsu IKEDA

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/52

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

公开(公告)号：US20190049836A1

公开(公告)日：2019-02-14

申请号：US16056786

申请日：2018-08-07

Applicant: AGC INC.

Inventor： Hiroshi HANEKAWA ,  Tsuyoshi KAKUTA ,  Yoichi SERA ,  Sadatatsu IKEDA

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/48

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.