公开(公告)号：US20240241433A1

公开(公告)日：2024-07-18

申请号：US18621502

申请日：2024-03-29

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US20250004360A1

公开(公告)日：2025-01-02

申请号：US18884196

申请日：2024-09-13

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.