-
公开(公告)号：US20210325772A1
公开(公告)日：2021-10-21
申请号：US17235220
申请日：2021-04-20
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO , Hiroshi HANEKAWA , Daijiro AKAGI
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20190056653A1
公开(公告)日：2019-02-21
申请号：US16056765
申请日：2018-08-07
Applicant: AGC INC.
Inventor： Hirotomo KAWAHARA , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
-
公开(公告)号：US20240160097A1
公开(公告)日：2024-05-16
申请号：US18544970
申请日：2023-12-19
Applicant: AGC INC.
Inventor： Hiroshi HANEKAWA , Taiga FUDETANI , Yusuke ONO , Shunya TAKI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
-
公开(公告)号：US20230305383A1
公开(公告)日：2023-09-28
申请号：US18201705
申请日：2023-05-24
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO , Hiroshi HANEKAWA , Daijiro AKAGI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20250036020A1
公开(公告)日：2025-01-30
申请号：US18911231
申请日：2024-10-09
Applicant: AGC Inc.
Inventor： Wataru NISHIDA , Daijiro AKAGI , Hiroaki IWAOKA , Hiroshi HANEKAWA , Taiga FUDETANI , Masaru HORI , Takayoshi TSUTSUMI
Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.
-
Patent Agency Ranking
公开(公告)号：US20250004360A1
公开(公告)日：2025-01-02
申请号：US18884196
申请日：2024-09-13
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Takuma KATO , Keishi TSUKIYAMA , Toshiyuki UNO , Hiroshi HANEKAWA , Ryusuke OISHI , Sadatatsu IKEDA , Yukihiro IWATA , Chikako HANZAWA
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
-
公开(公告)号：US20240184191A1
公开(公告)日：2024-06-06
申请号：US18439057
申请日：2024-02-12
Applicant: AGC INC.
Inventor： Yusuke ONO , Hiroshi HANEKAWA , Hirotomo KAWAHARA
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
-
公开(公告)号：US20240176225A1
公开(公告)日：2024-05-30
申请号：US18417352
申请日：2024-01-19
Applicant: AGC INC.
Inventor： Hiroyoshi TANABE , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of:
dbi MAX−(i×6+1) nm≤dbi≤dbi MAX−(i×6−1) nm
where the integer i is 0 or 1, and dbi MAX is represented by:
d
bi
MAX
(
nm
)
=
13.53
2
n
cos
6
°
{
INT
(
0.58
1
-
n
1
)
+
1
2
π
(
tan
-
1
(
-
k
2
1
-
n
2
)
+
0.64
)
}
,
where n1 is a refractive index of the lower absorbent layer, n2 is a refractive index of the upper absorbent layer, k2 is an absorption coefficient of the upper absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.-
公开(公告)号：US20240241433A1
公开(公告)日：2024-07-18
申请号：US18621502
申请日：2024-03-29
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Takuma KATO , Keishi TSUKIYAMA , Toshiyuki UNO , Hiroshi HANEKAWA , Ryusuke OISHI , Sadatatsu IKEDA , Yukihiro IWATA , Chikako HANZAWA
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
-
公开(公告)号：US20240201576A1
公开(公告)日：2024-06-20
申请号：US18592084
申请日：2024-02-29
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroshi HANEKAWA , Toshiyuki UNO , Masafumi AKITA
IPC: G03F1/24 , G03F1/52 , H01L21/027 , H01L21/033
CPC classification number: G03F1/24 , G03F1/52 , H01L21/0274 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.013 seconds)
