公开(公告)号：US20240241433A1

公开(公告)日：2024-07-18

申请号：US18621502

申请日：2024-03-29

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US20250065403A1

公开(公告)日：2025-02-27

申请号：US18945705

申请日：2024-11-13

Applicant: AGC Inc.

Inventor： Yasunari ISHIKAWA ,  Hiroshi DOTO ,  Koji NAITO ,  Keishi TSUKIYAMA

IPC: B22F9/20 ,  B22F9/04 ,  C22C21/00 ,  H01F1/047 ,  H01F41/02

Abstract: A method for producing magnetic particles containing a manganese-aluminum alloy includes: mixing manganese particles, an aluminum source, an activator containing a halide, and an anti-sintering agent to obtain a mixed powder; heating the mixed powder to calorize the manganese particles by utilizing gaps between particles of the anti-sintering agent formed by the anti-sintering agent, to obtain a treated mixture containing magnetic particles containing a manganese-aluminum alloy, wherein a mass ratio of aluminum to manganese (Al/Mn) in the manganese-aluminum alloy is in a range from 25/75 to 35/65; removing the anti-sintering agent from the treated mixture to recover the magnetic particles containing the manganese-aluminum alloy.

公开(公告)号：US20250004360A1

公开(公告)日：2025-01-02

申请号：US18884196

申请日：2024-09-13

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Takuma KATO ,  Keishi TSUKIYAMA ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Ryusuke OISHI ,  Sadatatsu IKEDA ,  Yukihiro IWATA ,  Chikako HANZAWA

IPC: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US20240210814A1

公开(公告)日：2024-06-27

申请号：US18596919

申请日：2024-03-06

Applicant: AGC INC.

Inventor： Hirotomo KAWAHARA ,  Daijiro AKAGI ,  Hiroaki IWAOKA ,  Toshiyuki UNO ,  Michinori SUEHARA ,  Keishi TSUKIYAMA

IPC: G03F1/32 ,  G03F1/24 ,  G03F1/48

CPC classification number: G03F1/32 ,  G03F1/24 ,  G03F1/48

Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.

公开(公告)号：US20230324785A1

公开(公告)日：2023-10-12

申请号：US18198881

申请日：2023-05-18

Applicant: AGC INC.

Inventor： Hirotomo KAWAHARA ,  Daijiro AKAGI ,  Hiroaki IWAOKA ,  Toshiyuki UNO ,  Michinori SUEHARA ,  Keishi TSUKIYAMA

IPC: G03F1/32 ,  G03F1/24 ,  G03F1/48

CPC classification number: G03F1/32 ,  G03F1/24 ,  G03F1/48

Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.