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1.
公开(公告)号:US20200165385A1
公开(公告)日:2020-05-28
申请号:US16776609
申请日:2020-01-30
Applicant: AGC Inc
Inventor: Makoto UNO , Hiromasa YAMAMOTO , Taiki HOSHINO , Keigo MATSUURA , Eiichiro ANRAKU
IPC: C08G65/00 , C09D171/02 , C08G65/336 , B05D1/18 , B05D1/00 , B05D5/08
Abstract: To provide a fluorinated ether compound, a fluorinated ether composition and a coating liquid capable of forming a surface layer excellent in initial water/oil repellency, fingerprint stain removability, abrasion resistance, light resistance and chemical resistance, an article having a surface layer and a method for producing it.A fluorinated ether compound represented by A-O—(Rf1O)m-Q1(R1)b, wherein A is a C1-20 perfluoroalkyl group, Rf1 is a perfluoroalkylene group, m is an integer of from 2 to 500, (Rf1O)m may consist of two or more types of Rf1O differing in the number of carbon atoms, Q1 is a (b+1) valent perfluorohydrocarbon group which may have a hydroxy group, R1 is a monovalent organic group having at least one hydrolyzable silyl group, b is an integer of at least 2, and the b R1 may be the same or different.
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公开(公告)号:US20210348024A1
公开(公告)日:2021-11-11
申请号:US17443038
申请日:2021-07-20
Applicant: AGC Inc.
Inventor: Keigo MATSUURA , Taiki HOSHINO , Kiyotaka TAKAO , Makoto UNO , Eiichiro ANRAKU , Motoshi AOYAMA , Naoki KATSUKI , Yusuke TOMIYORI , Toyokazu ENTA , Hiromasa YAMAMOTO
IPC: C09D183/10 , C09D5/00 , C09D7/20
Abstract: To provide a composition with which a surface layer excellent in abrasion resistance and sliding resistance can be formed, and an article.
The composition of the present invention comprises a compound represented by the formula (1) and a compound represented by the formula (2), wherein the ratio of the number of moles of the group represented by —CF3 in Rf1 in the formula (1) to the total of the number of moles of the group represented by —CF2— closest to Y1 in Rf2 in the formula (1), the number of moles of the group represented by —CF2— closest to Y2 in Rf3 in the formula (2) and the number of moles of the group represented by —CF2— closest to Y3 in Rf3 in the formula (2), is from 0.001 to 0.1: Rf1—(OX1)m1—O—Rf2—Y1—[Si(R1)n1L13-n1]g1 (1) [L23-n2(R2)n2Si]g2—Y2—Rf3—(OX2)m2—O—Rf4—Y3—[Si(R3)n3L33-n3]g3 (2)
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