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公开(公告)号：US20240427226A1
公开(公告)日：2024-12-26
申请号：US18822677
申请日：2024-09-03
Applicant: AGC Inc.
Inventor： Takeshi Okato , Daijiro Akagi , Takeshi Isogawa
Abstract: A reflective mask blank for EUV lithography, the reflective mask blank including: a substrate; a multilayer reflective film configured to reflect EUV light; and an absorption layer configured to absorb EUV light, in this order from a substrate side, in which the absorption layer includes a first absorption film and a second absorption film in this order from the substrate side, the absorption layer has a refractive index for EUV light having a wavelength of 13.5 nm of 0.95 or less, and the first absorption film is more easily chemically dry etched than the second absorption film.
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