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公开(公告)号:US12217970B2
公开(公告)日:2025-02-04
申请号:US17923495
申请日:2021-03-02
Inventor: Chang-Koo Kim , Jun-Hyun Kim
IPC: H01L21/311 , H01J37/32 , H01L21/02
Abstract: Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.
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公开(公告)号:US11681078B2
公开(公告)日:2023-06-20
申请号:US17691566
申请日:2022-03-10
Inventor: Chang-Koo Kim , Jun-Hyun Kim
IPC: G02B1/11 , H01L31/054 , H01L33/46 , H01L31/0236 , H01L31/028 , G02B1/12 , G02B5/02 , H01L33/44 , H01L31/18
CPC classification number: G02B1/11 , G02B1/12 , G02B5/0294 , H01L31/028 , H01L31/02363 , H01L31/054 , H01L31/1804 , H01L33/44 , H01L33/46
Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
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公开(公告)号:US11081361B2
公开(公告)日:2021-08-03
申请号:US16521701
申请日:2019-07-25
Inventor: Chang-Koo Kim , Jun-Hyun Kim , Jin-Su Park
IPC: H01L21/311 , C09K13/08
Abstract: Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
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公开(公告)号:US12134722B2
公开(公告)日:2024-11-05
申请号:US17760519
申请日:2020-06-01
Inventor: Chang-Koo Kim , Jun-Hyun Kim , Jin-Su Park
IPC: C09K13/00 , H01J37/32 , H01L21/311
Abstract: Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
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公开(公告)号:US11300711B2
公开(公告)日:2022-04-12
申请号:US16866017
申请日:2020-05-04
Inventor: Chang-Koo Kim , Jun-Hyun Kim
IPC: G02B1/11 , H01L31/054 , H01L33/46 , H01L31/0236 , H01L31/028 , G02B1/12 , G02B5/02 , H01L33/44 , H01L31/18
Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
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公开(公告)号:US10690811B2
公开(公告)日:2020-06-23
申请号:US16057128
申请日:2018-08-07
Inventor: Chang-Koo Kim , Jun-Hyun Kim
IPC: H01L31/054 , H01L33/46 , G02B1/11 , H01L31/0236 , H01L31/028 , G02B1/12 , G02B5/02 , H01L33/44 , H01L31/18
Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
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公开(公告)号:US12191141B2
公开(公告)日:2025-01-07
申请号:US17917155
申请日:2021-02-18
Inventor: Chang-Koo Kim , Jun-Hyun Kim
IPC: H01L21/02 , H01L21/311 , H01J37/32
Abstract: A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.
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