公开(公告)号：US10404059B2

公开(公告)日：2019-09-03

申请号：US15428535

申请日：2017-02-09

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy ,  Linfeng He ,  Yuanzhong Zhou

IPC: H02H7/20 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092

Abstract: Distributed switches to suppress transient electrical overstress-induced latch-up are provided. In certain configurations, an integrated circuit (IC) or semiconductor chip includes a transient electrical overstress detection circuit that activates a transient overstress detection signal in response to detecting a transient electrical overstress event between a pair of power rails. The IC further includes mixed-signal circuits and latch-up suppression switches distributed across the IC, and the latch-up suppression switches temporarily clamp the power rails to one another in response to activation of the transient overstress detection signal to inhibit latch-up of the mixed-signal circuits.

公开(公告)号：US20240363618A1

公开(公告)日：2024-10-31

申请号：US18306544

申请日：2023-04-25

Applicant: Analog Devices, Inc.

Inventor： Srivatsan Parthasarathy ,  Shudong Huang ,  Yuanzhong Zhou ,  Jean-Jacques Hajjar

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: Low capacitance poly-bounded silicon controlled rectifiers (SCRs) are disclosed herein. In certain embodiments, an SCR includes an n-type well (NW) and a p-type well (PW) formed adjacent to one another in a substrate. The SCR further includes active regions including p-type active (P+) fin regions over the NW and connected to an anode terminal of the SCR, and n-type active (N+) fin regions over the PW and connected to a cathode terminal of the SCR. The SCR further includes polysilicon gate regions over the PW and NW that serve to separate the active regions while also improving the SCR's turn-on speed in response to fast overstress transients.

公开(公告)号：US20180226788A1

公开(公告)日：2018-08-09

申请号：US15428535

申请日：2017-02-09

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy ,  Linfeng He ,  Yuanzhong Zhou

IPC: H02H7/20 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092

CPC classification number: H02H7/205 ,  H01L23/5286 ,  H01L27/0248 ,  H01L27/0262 ,  H01L27/0921

Abstract: Distributed switches to suppress transient electrical overstress-induced latch-up are provided. In certain configurations, an integrated circuit (IC) or semiconductor chip includes a transient electrical overstress detection circuit that activates a transient overstress detection signal in response to detecting a transient electrical overstress event between a pair of power rails. The IC further includes mixed-signal circuits and latch-up suppression switches distributed across the IC, and the latch-up suppression switches temporarily clamp the power rails to one another in response to activation of the transient overstress detection signal to inhibit latch-up of the mixed-signal circuits.